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Infineon Technologies IRF6892STRPBF — Discrete Semiconductors

IRF6892STRPBF N-Channel MOSFET, 25V, 1.7mOhm, DIRECTFET-LV

MPNIRF6892STRPBF
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Infineon IRF6892STRPBF, N-Channel HEXFET MOSFET, 25 V drain-source, 28 A switching current, 1.7 mOhm max Rds(on) at 10 V, 25 nC gate charge at 4.5 V, DIRECTFET-LV package, -40°C to 150°C junction temperature.

$0.71Ref. price · indicative, final on quote
Infineon Technologies IRF6892STRPBF datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRF6892STRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Operating temperature high-40°C to 150°C(TJ)
Vgs±16 V
Power2.1
Package_typeBulk
Capacitance_uf0.0025
StatusActive
Supply voltage25.0
Vgs(Th) (Max) @ id2.1 V @ 50µA
Switching current28.0
Rds on (Max) @ id, vgs1.7mOhm @ 28 A, 10 V
Gate charge (Qg) (Max) @ vgs25 nC @ 4.5 V

Product details

The IRF6892STRPBF is an N-channel HEXFET power MOSFET from Infineon in the DIRECTFET-LV package, rated for 25 V drain-source and 28 A switching current.

Gate charge and threshold — driver compatibility

Gate charge is 25 nC max at 4.5 V, which means a 5 V logic-level gate driver with 2 A peak source can switch this FET in under 15 ns. The 2.1 V max threshold at 50 µA confirms logic-level turn-on, but the designer must ensure the driver's Voh stays above 4.5 V to achieve the specified Rds(on); at 3.3 V gate drive the on-resistance will rise above the 1.7 mOhm figure.

Junction temperature and package — where it fits

The DIRECTFET-LV package is a low-profile, can-style surface-mount case that requires a specific solder stencil aperture for the large drain pad — the datasheet landing pattern is non-negotiable for achieving the rated thermal resistance.

Frequently asked questions

What is the Rds(on) and gate charge of the IRF6892STRPBF?

Maximum gate charge is 25 nC at 4.5 V.