The IRF6727MTRPBF is an Infineon HEXFET N-channel MOSFET rated for 30 V drain-to-source with a continuous drain current of 180 A when the case is held at 25 °C, or 32 A in still air at 25 °C ambient. The DirectFET Isometric MX package is a solderable can with a low profile and a large top-side drain tab that conducts heat into the board.
Gate drive and switching — sizing the driver for 74 nC Qg
Total gate charge is 74 nC at 4.5 V drive. The input capacitance is 6190 pF at 15 V drain bias. The gate threshold voltage maximum is 2.35 V at 100 µA drain current. With a 4.5 V minimum drive the gate overdrive is sufficient to fully enhance the channel across the -40 to 150 °C range.
Thermal budget — 89 W at case, 2.8 W in free air
Maximum power dissipation is 89 W when the case temperature is held at 25 °C, and 2.8 W at 25 °C ambient in still air. The 32:1 ratio between case-referenced and ambient-referenced ratings means the thermal resistance from junction to case is roughly 1.4 °C/W, while junction-to-ambient is about 45 °C/W without a heatsink. In a real board with 1 oz copper on a 1-inch-square pad, the effective RthJA drops to around 20–25 °C/W, which supports 5–6 W continuous dissipation. Operating junction temperature range is -40 to 150 °C. The Rds(on) increases with junction temperature.
Lifecycle and compliance — active production, ROHS3
It is ROHS3 compliant, with no restricted substances above the exemption thresholds. The DirectFET MX package is moisture sensitivity level (MSL) 1 per the Infineon datasheet — no dry-bake required before reflow, which simplifies storage and handling for the storeroom. Store the reels in a standard ESD-safe cabinet; no special dry-pack needed.