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Infineon Technologies IRF6722MTRPBF — Discrete Semiconductors
Infineon Technologies

IRF6722MTRPBF N-Channel MOSFET, 30V 13A/56A, 7.7mOhm

MPNIRF6722MTRPBF
Active

IRF6722MTRPBF, Infineon HEXFET® N-Channel MOSFET, 30 V Vds, 13 A continuous / 56 A pulsed, 7.7 mOhm Rds(on) at 10 V, 17 nC Qg at 4.5 V, DIRECTFET package, surface mount, -40°C to 150°C Tj.

$0.83Ref. price · indicative, final on quote
IRF6722MTRPBF datasheet
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MOQ1 pcs
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Specifications

IRF6722MTRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting_typeSurface Mount
Operating temperature high-40°C to 150°C(TJ)
Vgs±20 V
Power_w2.3
Package_typeBulk
Capacitance_uf0.0013
Product_statusActive
Supply_voltage_v30.0
Vgs(Th) (Max) @ id2.4 V @ 50µA
Switching_current_a13.0
Rds on (Max) @ id, vgs7.7mOhm @ 13 A, 10 V
Gate charge (Qg) (Max) @ vgs17 nC @ 4.5 V

Product details

What this MOSFET is and where it fits

The Infineon IRF6722MTRPBF is an N-channel enhancement-mode power MOSFET from the HEXFET family, built for low-voltage (<30 V) switching and load-management roles. It carries a continuous drain current of 13 A and a pulsed rating of 56 A, with a maximum on-resistance of 7.7 mOhm at a 10 V gate drive. The DIRECTFET package keeps the footprint small and the thermal path short — useful for dense power stages, point-of-load converters, and battery-protection circuits where board space is tight and junction temperatures can hit 150°C.

Key ratings and what they mean for the BOM

The 7.7 mOhm Rds(on) at 10 V gate drive drives conduction loss. At 13 A, dissipation is within the 2.3 W package limit. The 17 nC gate charge at 4.5 V allows fast switching.

Frequently asked questions

What is the Rds(on) of IRF6722MTRPBF?

The maximum on-resistance is 7.7 mOhm at a drain current of 13 A with a 10 V gate drive.

Is IRF6722MTRPBF RoHS compliant?

The part is listed as RoHS compliant; the 'TRPBF' suffix in the order code indicates lead-free and RoHS-compatible plating.

What package does IRF6722MTRPBF use?

It comes in the DIRECTFET package, a surface-mount, leadless package designed for low inductance and good thermal performance.