IRF6722MTRPBF, Infineon HEXFET® N-Channel MOSFET, 30 V Vds, 13 A continuous / 56 A pulsed, 7.7 mOhm Rds(on) at 10 V, 17 nC Qg at 4.5 V, DIRECTFET package, surface mount, -40°C to 150°C Tj.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Operating temperature high | -40°C to 150°C(TJ) |
| Vgs | ±20 V |
| Power | 2.3 |
| Package_type | Bulk |
| Capacitance_uf | 0.0013 |
| Status | Active |
| Supply voltage | 30.0 |
| Vgs(Th) (Max) @ id | 2.4 V @ 50µA |
| Switching current | 13.0 |
| Rds on (Max) @ id, vgs | 7.7mOhm @ 13 A, 10 V |
| Gate charge (Qg) (Max) @ vgs | 17 nC @ 4.5 V |
The Infineon IRF6722MTRPBF is an N-channel enhancement-mode power MOSFET from the HEXFET family, built for low-voltage (<30 V) switching and load-management roles. It carries a continuous drain current of 13 A and a pulsed rating of 56 A, with a maximum on-resistance of 7.7 mOhm at a 10 V gate drive.
At 13 A, dissipation is within the 2.3 W package limit. The 17 nC gate charge at 4.5 V allows fast switching.
The maximum on-resistance is 7.7 mOhm at a drain current of 13 A with a 10 V gate drive.
The part is listed as RoHS compliant; the 'TRPBF' suffix in the order code indicates lead-free and RoHS-compatible plating.
It comes in the DIRECTFET package, a surface-mount, leadless package designed for low inductance and good thermal performance.