IRF6717MTRPBF
Infineon Technologies · HEXFET® Series
MOSFET N-CH 25V 38A DIRECTFET
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 25 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 38A (Ta), 200A (Tc) |
| Power dissipation | 2.8W (Ta), 96W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | DirectFET™ Isometric MX |
| Vgs(th) (Max) @ id | 2.35V @ 150µA |
| Rds on (Max) @ id, vgs | 1.25mOhm @ 38A, 10V |
| Gate charge (Qg) (Max) @ vgs | 69 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 6750 pF @ 13 V |
IRF6717MTRPBF
[ALLOC] verified