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Infineon Technologies IRF6714MTRPBF — Discrete Semiconductors
Infineon Technologies

IRF6714MTRPBF N-Channel HEXFET MOSFET, 25 V

MPNIRF6714MTRPBF
Active

Infineon HEXFET® IRF6714MTRPBF, N-Channel MOSFET, 25 V Vds, 2.1 mOhm Rds(on) max at 29 A, 10 V Vgs, 44 nC Qg at 4.5 V, -40°C to 150°C Tj, DirectFET package.

$0.93Ref. price · indicative, final on quote
IRF6714MTRPBF datasheet
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

IRF6714MTRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting_typeSurface Mount
Operating temperature high-40°C to 150°C(TJ)
Vgs±20 V
Power_w2.8
Package_typeBulk
Capacitance_uf0.0039
Product_statusActive
Supply_voltage_v25.0
Vgs(Th) (Max) @ id2.4 V @ 100µA
Switching_current_a29.0
Rds on (Max) @ id, vgs2.1mOhm @ 29 A, 10 V
Gate charge (Qg) (Max) @ vgs44 nC @ 4.5 V

Product details

25 V N-channel FET with 2.1 mOhm Rds(on) — conduction loss floor

That Rds(on) figure, specified at the full rated current, sets the conduction loss for a synchronous rectifier or a low-side switch in a 12 V or 24 V rail — at 29 A the I²R loss is under 1.8 W, which the 2.8 W package power rating can handle with adequate board copper.

Gate charge and switching speed — sizing the driver

Total gate charge is 44 nC at 4.5 V Vgs, meaning a driver sourcing 1 A can turn the FET on in about 44 ns. The ±20 V maximum gate rating gives headroom for gate-drive overshoot in a hard-switching topology — a 12 V gate drive rail is well inside the safe window. The 0.0039 µF input capacitance (Ciss) is consistent with a die sized for 166 A pulsed drain current.

Temperature range and operating environment

The 2.4 V maximum gate threshold at 100 µA ensures the device turns on cleanly with a 3.3 V logic-level gate drive, though the 2.1 mOhm Rds(on) is specified at 10 V Vgs for lowest resistance.

Sourcing and lifecycle posture

Listed with an active lifecycle status. The part is a current-production Infineon DirectFET MOSFET, sourced through independent distribution.

Frequently asked questions

Can I use IRF6714MTRPBF in a motor driver?

Yes. The 25 V drain-source rating and 2.1 mOhm Rds(on) at 10 V gate drive suit a low-side or H-bridge switch in a 12 V or 24 V brushed DC or stepper motor driver. The 44 nC gate charge at 4.5 V means a standard gate-driver IC can switch it at tens of kHz without excessive drive current.