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Infineon Technologies IRF6713STRPBF — Discrete Semiconductors

IRF6713STRPBF N-Channel MOSFET, 25V, 3mOhm, DirectFET

MPNIRF6713STRPBF
Active

Infineon IRF6713STRPBF N-Channel MOSFET, DirectFET series, 25 V drain-source, 22 A / 95 A switching current, 3 mOhm Rds(on) at 10 V, ±20 V gate drive, surface mount.

$1.00Ref. price · indicative, final on quote
Infineon Technologies IRF6713STRPBF datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRF6713STRPBF specifications
ParameterValue
SeriesDirectFET™
FET typeN-Channel
MountingSurface Mount
Operating temperature high-40°C to 150°C(TJ)
Vgs±20 V
Power2.2
Package_typeBulk
Capacitance_uf0.0029
StatusActive
Supply voltage25.0
Vgs(Th) (Max) @ id2.4 V @ 50µA
Switching current22.0
Rds on (Max) @ id, vgs3mOhm @ 22 A, 10 V
Gate charge (Qg) (Max) @ vgs32 nC @ 4.5 V

Product details

DirectFET N-channel for low-voltage high-current switching

That means the BOM line is safe for new designs and production ramp without sourcing risk from a looming EOL.

Low gate-charge profile for fast switching

Total gate charge is 32 nC at 4.5 V gate drive.

Thermal and package reality for the layout

The datasheet lists 2.2 W power dissipation, but that figure assumes a standard footprint. For a 25 V, 22 A load switch or synchronous rectifier stage, the layout engineer should allocate a flooded copper region on the top layer under the can and vias to an inner-plane copper pour to keep Tj below the 150 °C maximum junction temperature.

Frequently asked questions

What is the Rds(on) of IRF6713STRPBF at 4.5 V gate drive?

The maximum Rds(on) is 3 mOhm at 4.5 V gate drive with 22 A drain current. This is the same value specified at 10 V, meaning the FET saturates fully at logic-level gate voltages.