DirectFET N-channel for low-voltage high-current switching
The IRF6713STRPBF is an N-channel MOSFET from Infineon's DirectFET series, rated for 25 V drain-source and a continuous drain current of 22 A (95 A pulsed) in a surface-mount can-style package.
That means the BOM line is safe for new designs and production ramp without sourcing risk from a looming EOL.
Low gate-charge profile for fast switching
Total gate charge is 32 nC at 4.5 V gate drive. At a 500 kHz switching frequency the gate driver delivers about 16 mA average — well within the capability of a standard half-bridge driver IC. The ±20 V maximum gate-source rating gives headroom for driving the FET from a 12 V regulated rail without worrying about oxide breakdown during transients.
Thermal and package reality for the layout
The DirectFET package is a copper can with the drain on the top-side tab — the PCB copper area under the can sets the junction-to-ambient thermal resistance. The datasheet lists 2.2 W power dissipation, but that figure assumes a standard footprint. For a 25 V, 22 A load switch or synchronous rectifier stage, the layout engineer should allocate a flooded copper region on the top layer under the can and vias to an inner-plane copper pour to keep Tj below the 150 °C maximum junction temperature.