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Infineon Technologies IRF6711STRPBF — Discrete Semiconductors

IRF6711STRPBF N-Channel MOSFET, 25 V, 3.8 mOhm Rds(on)

MPNIRF6711STRPBF
Active

Infineon IRF6711STRPBF, N-Channel MOSFET, 25 V, 19 A, 3.8 mOhm Rds(on) at 10 V, DirectFET surface-mount package, -40°C to 150°C junction temperature.

$0.81Ref. price · indicative, final on quote
Infineon Technologies IRF6711STRPBF datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRF6711STRPBF specifications
ParameterValue
SeriesDirectFET™
FET typeN-Channel
MountingSurface Mount
Operating temperature high-40°C to 150°C(TJ)
Vgs±20 V
Power2.2
Package_typeBulk
Capacitance_uf0.0018
StatusActive
Supply voltage25.0
Vgs(Th) (Max) @ id2.35 V @ 25µA
Switching current19.0
Rds on (Max) @ id, vgs3.8mOhm @ 19 A, 10 V
Gate charge (Qg) (Max) @ vgs20 nC @ 4.5 V

Product details

The IRF6711STRPBF: No LTB window or last-time-buy deadline to track for this order code.

The on-resistance is specified at 3.8 mOhm maximum when the gate is driven to 10 V and the drain carries 19 A. That is the number to use for the I²R conduction loss calculation at full load; at lower gate voltages the resistance rises, so a 5 V logic drive will see a higher effective Rds(on). The 25 V drain-source rating and 19 A continuous current envelope suit this part for 12 V to 24 V rail switching, OR-ing diodes, and low-voltage DC-DC converter synchronous rectification.

DirectFET can — layout and thermal handling

The DirectFET package is a metal can with the drain tab on top and source/gate pads underneath. At 2.2 W dissipation the can will run hot without adequate copper pour or airflow. Gate drive threshold is 2.35 V maximum at 25 µA drain current, and the absolute maximum gate-source voltage is ±20 V.

Switching speed and gate drive budget

Total gate charge is 20 nC at 4.5 V, which means a 1 A gate driver can switch the FET in roughly 20 ns.

Frequently asked questions

What is the Rds(on) of IRF6711STRPBF?

The maximum Rds(on) is 3.8 mOhm at Vgs = 10 V and Id = 19 A. That is the conduction loss figure to use for the worst-case thermal calculation.

Does IRF6711STRPBF require a heatsink?

The DirectFET package relies on the PCB copper pour for heat spreading. At 2.2 W dissipation, adequate copper area on the board is essential — without it the junction temperature will exceed the 150 °C maximum under continuous full load.