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The IRF6711STRPBF: No LTB window or last-time-buy deadline to track for this order code.
3.8 mOhm Rds(on) at 10 V — the conduction loss floor
The on-resistance is specified at 3.8 mOhm maximum when the gate is driven to 10 V and the drain carries 19 A. That is the number to use for the I²R conduction loss calculation at full load; at lower gate voltages the resistance rises, so a 5 V logic drive will see a higher effective Rds(on). The 25 V drain-source rating and 19 A continuous current envelope suit this part for 12 V to 24 V rail switching, OR-ing diodes, and low-voltage DC-DC converter synchronous rectification.
DirectFET can — layout and thermal handling
The DirectFET package is a metal can with the drain tab on top and source/gate pads underneath. The PCB copper area under the can is the primary heatsink — the datasheet's thermal resistance figures assume a specific pad geometry, so the board layout directly sets the junction temperature. At 2.2 W dissipation the can will run hot without adequate copper pour or airflow. Gate drive threshold is 2.35 V maximum at 25 µA drain current, and the absolute maximum gate-source voltage is ±20 V. A 10 V gate drive is the recommended operating point for the rated Rds(on); a 5 V logic signal will still turn the FET on hard enough for most loads, but the on-resistance will be higher than the 3.8 mOhm figure.
Switching speed and gate drive budget
Total gate charge is 20 nC at 4.5 V, which means a 1 A gate driver can switch the FET in roughly 20 ns. The 19 A continuous rating and 84 A pulsed current (from the description) make this a capable part for hard-switched converters up to a few hundred kilohertz, provided the gate drive loop is kept tight.