60 V, 11 mOhm N-channel in a DirectFET package
The DirectFET Isometric MZ package is a low-profile, solderable-drain can that conducts heat directly to the PCB pad — the thermal resistance to case is 1.4°C/W (89 W max dissipation at case), which keeps the junction cool in a tight layout.
Gate charge and switching profile
Total gate charge is 36 nC at 10 V gate drive, with an input capacitance of 1350 pF at 25 V drain-source. This Qg number tells you the driver current needed to hit a target switching frequency — for a 100 kHz hard-switched converter, the average gate drive current is about 3.6 mA, easily handled by a standard MOSFET driver. The gate threshold voltage maximum is 4.9 V at 100 µA drain current, so a 5 V logic gate drive will barely turn it on; a 10 V rail is the intended drive voltage for minimum Rds(on).
Temperature range and thermal limits
Power dissipation is 3.6 W in still air at 25°C ambient, rising to 89 W when the case is held at 25°C — in practice, the board copper area and airflow set the real limit.
Lifecycle and sourcing posture
ROHS3 compliant.