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Infineon Technologies IRF6674TRPBF

IRF6674TRPBF HEXFET N-Ch 60V 13.4A MOSFET, 11mOhm Rds(on)

MPNIRF6674TRPBF
End of Life

Infineon HEXFET® IRF6674TRPBF, N-Channel MOSFET, 60V Vdss, 13.4A Id, 11mOhm Rds(on) @ 10V, DirectFET™ Isometric MZ package, -40°C to 150°C.

$3.57Ref. price · indicative, final on quote
PackagingDirectFET™ Isometric MZ
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF6674TRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C13.4A (Ta), 67A (Tc)
Power dissipation3.6W (Ta), 89W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseDirectFET™ Isometric MZ
Vgs(th) (Max) @ id4.9V @ 100µA
Rds on (Max) @ id, vgs11mOhm @ 13.4A, 10V
Gate charge (Qg) (Max) @ vgs36 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1350 pF @ 25 V

Product details

60 V, 11 mOhm N-channel in a DirectFET package

The DirectFET Isometric MZ package is a low-profile, solderable-drain can that conducts heat directly to the PCB pad — the thermal resistance to case is 1.4°C/W (89 W max dissipation at case), which keeps the junction cool in a tight layout.

The gate threshold voltage maximum is 4.9 V at 100 µA drain current, so a 5 V logic gate drive will barely turn it on; a 10 V rail is the intended drive voltage for minimum Rds(on).

Temperature range and thermal limits

Power dissipation is 3.6 W in still air at 25°C ambient, rising to 89 W when the case is held at 25°C — in practice, the board copper area and airflow set the real limit.

ROHS3 compliant.

Frequently asked questions

What are the exact specifications of IRF6674TRPBF (Rds on, Vgs, Qg)?

Drain-source voltage rating is 60 V, continuous drain current is 13.4 A at 25°C ambient.