Infineon HEXFET IRF6665TRPBF, N-Channel power MOSFET, 100 V drain-source, 4.2 A switching current, 62 mΩ Rds(on) at 10 V, 13 nC gate charge, surface mount, -40°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting_type | Surface Mount |
| Operating temperature high | -40°C to 150°C(TJ) |
| Vgs | ±20 V |
| Power_w | 2.2 |
| Package_type | Bulk |
| Capacitance_uf | 0.0005 |
| Product_status | Active |
| Supply_voltage_v | 100.0 |
| Vgs(Th) (Max) @ id | 5 V @ 250µA |
| Switching_current_a | 4.2 |
| Rds on (Max) @ id, vgs | 62mOhm @ 5 A, 10 V |
| Gate charge (Qg) (Max) @ vgs | 13 nC @ 10 V |
The Infineon IRF6665TRPBF is a 100 V N-Channel HEXFET power MOSFET rated for 4.2 A switching current, with a maximum on-resistance of 62 mΩ at Vgs = 10 V and Id = 5 A.
At 62 mΩ max, the conduction loss at 4.2 A is within the 2.2 W package dissipation limit. The 13 nC gate charge keeps switching transitions fast. At 150°C junction, the Rds(on) roughly doubles from the 25°C value — factor that into the thermal budget if the ambient is above 85°C.
The maximum gate-source voltage is ±20 V. This is a standard 10 V logic-level gate drive threshold — the Rds(on) is specified at Vgs = 10 V.