Total gate charge is 50 nC at 10 V, which translates to a 10 mA average gate-drive current at 200 kHz switching frequency — a standard gate-driver IC handles that without thermal stress. Input capacitance is 2120 pF at 25 V drain-source, so the driver's peak current must charge that capacitance within the desired dead-time window.
DirectFET MN footprint and thermal path
The DirectFET Isometric MN package is a solderable-can surface-mount package; the drain tab on the top of the can conducts heat into the PCB copper plane. The land pattern for DirectFET MN is specific — the PCB footprint must match the MN outline to get the rated 89 W power dissipation at the case. The 2.8 W at ambient reflects the free-air derating without a heatsink.
The 150°C TJ(max) gives headroom for surge currents and high ambient temperatures.