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Infineon Technologies IRF6648TRPBF

IRF6648TRPBF N-Channel MOSFET, 60 V, 86 A, DirectFET MN

MPNIRF6648TRPBF
End of Life

Infineon HEXFET IRF6648TRPBF, N-Channel MOSFET, 60 V Vdss, 86 A continuous drain (Tc), 7 mOhm Rds(on) at 17 A, 10 V, DirectFET Isometric MN package, -40°C to 150°C junction temperature.

$2.28Ref. price · indicative, final on quote
PackagingDirectFET™ Isometric MN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF6648TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C86A (Tc)
Power dissipation2.8W (Ta), 89W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseDirectFET™ Isometric MN
Vgs(th) (Max) @ id4.9V @ 150µA
Rds on (Max) @ id, vgs7mOhm @ 17A, 10V
Gate charge (Qg) (Max) @ vgs50 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2120 pF @ 25 V

Product details

Gate charge and switching budget

Total gate charge is 50 nC at 10 V, which translates to a 10 mA average gate-drive current at 200 kHz switching frequency — a standard gate-driver IC handles that without thermal stress. Input capacitance is 2120 pF at 25 V drain-source, so the driver's peak current must charge that capacitance within the desired dead-time window.

DirectFET MN footprint and thermal path

The DirectFET Isometric MN package is a solderable-can surface-mount package; the drain tab on the top of the can conducts heat into the PCB copper plane. The land pattern for DirectFET MN is specific — the PCB footprint must match the MN outline to get the rated 89 W power dissipation at the case. The 2.8 W at ambient reflects the free-air derating without a heatsink.

Temperature grade and environment

The 150°C TJ(max) gives headroom for surge currents and high ambient temperatures.

Lifecycle and compliance

It is ROHS3 compliant and lead-free per the ROHS3 standard, so it passes the material declaration for EU and most global markets.

Frequently asked questions

What is the equivalent of IRF6648TRPBF?

The IPD50R950CEAUMA1 is a CoolMOS CE N-channel MOSFET with a 500 V drain-source rating and 950 mOhm on-resistance — it is not a functional equivalent because the voltage class and on-resistance differ by an order of magnitude.

Is IRF6648TRPBF RoHS compliant?

Yes, the IRF6648TRPBF is ROHS3 compliant and lead-free per the ROHS3 directive. It passes the material declaration for EU and most global markets without exemption.