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Infineon Technologies IRF6646TRPBF

IRF6646TRPBF N-Channel MOSFET, 80V, 12A, DirectFET MN

MPNIRF6646TRPBF
End of Life

Infineon HEXFET IRF6646TRPBF, N-Channel MOSFET, 80 V Vdss, 12 A continuous drain, 9.5 mOhm Rds(on) at 10 V, DirectFET Isometric MN package, -40 to 150 °C.

$2.85Ref. price · indicative, final on quote
Infineon Technologies IRF6646TRPBF datasheet (PDF)
PackagingDirectFET™ Isometric MN
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF6646TRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Ta), 68A (Tc)
Power dissipation2.8W (Ta), 89W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseDirectFET™ Isometric MN
Vgs(th) (Max) @ id4.9V @ 150µA
Rds on (Max) @ id, vgs9.5mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs50 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2060 pF @ 25 V

Product details

80 V, 12 A N-channel — DirectFET package, 9.5 mOhm Rds(on)

The IRF6646TRPBF is an 80 V, 12 A N-channel MOSFET from Infineon's HEXFET series, housed in the DirectFET Isometric MN package.

Thermal budget in the DirectFET can

The DirectFET Isometric MN package is a can-shaped surface-mount format with a solderable top-side drain contact. Power dissipation is rated 2.8 W at 25 °C ambient and 89 W at the case — the wide spread reflects the package's ability to sink heat through the top-side drain pad to a heatsink or PCB copper plane.

Active production, sourced per BOM line

It is ROHS3 compliant.

Frequently asked questions

What package does the IRF6646TRPBF come in?

It is supplied in the DirectFET Isometric MN package, a surface-mount can format with a solderable top-side drain contact.