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IRF6646TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET IRF6646TRPBF, N-Channel MOSFET, 80 V Vdss, 12 A continuous drain, 9.5 mOhm Rds(on) at 10 V, DirectFET Isometric MN package, -40 to 150 °C.

Infineon Technologies IRF6646TRPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

[ORIGINAL SEALED] [PRE-SHIP HD PHOTOS] [30D WARRANTY · COC] [TRACKED DAP/DDP]

Technical specifications

IRF6646TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Ta), 68A (Tc)
Power dissipation2.8W (Ta), 89W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseDirectFET™ Isometric MN
Vgs(th) (Max) @ id4.9V @ 150µA
Rds on (Max) @ id, vgs9.5mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs50 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2060 pF @ 25 V

Technical details

80 V, 12 A N-channel — DirectFET package, 9.5 mOhm Rds(on)

The IRF6646TRPBF is an 80 V, 12 A N-channel MOSFET from Infineon's HEXFET series, housed in the DirectFET Isometric MN package.

Thermal budget in the DirectFET can

The DirectFET Isometric MN package is a can-shaped surface-mount format with a solderable top-side drain contact. Power dissipation is rated 2.8 W at 25 °C ambient and 89 W at the case — the wide spread reflects the package's ability to sink heat through the top-side drain pad to a heatsink or PCB copper plane.

Active production, sourced per BOM line

It is ROHS3 compliant.

IRF6646TRPBF
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