80 V, 12 A N-channel — DirectFET package, 9.5 mOhm Rds(on)
The IRF6646TRPBF is an 80 V, 12 A N-channel MOSFET from Infineon's HEXFET series, housed in the DirectFET Isometric MN package.
Gate charge and switching loss budget
Total gate charge at 10 V is 50 nC, with an input capacitance of 2060 pF at 25 V drain-source.
Thermal budget in the DirectFET can
The DirectFET Isometric MN package is a can-shaped surface-mount format with a solderable top-side drain contact. Power dissipation is rated 2.8 W at 25 °C ambient and 89 W at the case — the wide spread reflects the package's ability to sink heat through the top-side drain pad to a heatsink or PCB copper plane.
Active production, sourced per BOM line
It is ROHS3 compliant.
