100 V N-channel in a DirectFET can
The IRF6644TRPBF: The 13 mOhm max Rds(on) at 10 V gate drive sets the conduction loss floor — at 10.3 A the dissipation is under 1.4 W, which the DirectFET Isometric MN package can sink to the board without a separate heatsink in many layouts.
Gate charge and switching budget
Total gate charge Qg is 47 nC at 10 V. Driving this at 100 kHz requires an average gate current of about 4.7 mA from the driver — well within the capability of a standard gate-drive IC. The 2210 pF input capacitance at 25 V drain-source gives a rough Ciss figure for estimating switching losses in a hard-switched converter.
Active production, ROHS3 compliant
ROHS3 compliant.
