Infineon HEXFET® IRF6644TRPBF, N-Channel MOSFET, 100 V Vdss, 13 mOhm Rds(on) max at 10 V, 10.3 A continuous drain (Ta), DirectFET Isometric MN surface-mount package, -40°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10.3A (Ta), 60A (Tc) |
| Power dissipation | 2.8W (Ta), 89W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | DirectFET™ Isometric MN |
| Vgs(th) (Max) @ id | 4.8V @ 150µA |
| Rds on (Max) @ id, vgs | 13mOhm @ 10.3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 47 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2210 pF @ 25 V |
The IRF6644TRPBF: The 13 mOhm max Rds(on) at 10 V gate drive sets the conduction loss floor — at 10.3 A the dissipation is under 1.4 W, which the DirectFET Isometric MN package can sink to the board without a separate heatsink in many layouts.
Total gate charge Qg is 47 nC at 10 V.
ROHS3 compliant.
Yes, the 100 V drain-source rating provides ample headroom for 24 V bus rails — the derating margin is over 4×, which keeps the device well within its safe operating area even under transient overvoltage conditions.