150 V N-channel in a DirectFET can — what the ratings mean for the switching node
The Infineon IRF6643TRPBF is a 150 V N-channel HEXFET MOSFET in the DirectFET Isometric MZ package. The 150 V drain-to-source rating gives headroom for bus architectures. The headline Rds(on) is 34.5 mOhm max at 7.6 A with a 10 V gate drive. Gate charge of 55 nC at 10 V is moderate. The continuous drain current is derated to 6.2 A at ambient but reaches 35 A when the case is held at 25 °C.
Package reality — DirectFET MZ layout and thermal management
The DirectFET Isometric MZ package is a metal-can with a solderable backside that forms the drain connection. It sits flat on the PCB and conducts heat through the drain tab into the board copper or a thermal pad. The supplier device package is DIRECTFET MZ; the mounting type is surface mount.
Active lifecycle — no last-time-buy pressure
The IRF6643TRPBF carries an Active product status and is RoHS3 compliant. There is no announced end-of-life, no NRND flag, and no last-time-buy schedule.