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Infineon Technologies IRF6641TRPBF — Discrete Semiconductors

IRF6641TRPBF N-Channel MOSFET, 200 V, 4.6 A, 59.9 mOhm

MPNIRF6641TRPBF
Active

Infineon IRF6641TRPBF HEXFET N-Channel MOSFET, 200 V, 4.6 A, 59.9 mOhm Rds(on) @ 10 V, 48 nC gate charge, surface mount, -40 to 150 °C Tj.

$1.85Ref. price · indicative, final on quote
Infineon Technologies IRF6641TRPBF datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRF6641TRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Operating temperature high-40°C to 150°C(TJ)
Vgs±20 V
Power2.8
Package_typeBulk
Capacitance_uf0.0023
StatusActive
Supply voltage200.0
Vgs(Th) (Max) @ id4.9 V @ 150µA
Switching current4.6
Rds on (Max) @ id, vgs59.9mOhm @ 5.5 A, 10 V
Gate charge (Qg) (Max) @ vgs48 nC @ 10 V

Product details

200 V N-channel MOSFET for switched-mode and linear applications

The Infineon IRF6641TRPBF is a 200 V N-channel HEXFET power MOSFET rated for 4.6 A continuous drain current and a maximum Rds(on) of 59.9 mOhm at 10 V gate drive. The surface-mount package fits standard reflow assembly, and the 150 °C junction temperature rating gives headroom in hot environments such as enclosed power supplies or industrial control cabinets.

At 5.5 A drain current and 10 V gate drive, the maximum on-resistance is 59.9 mOhm. Conduction loss at 5.5 A is within the 2.8 W package power dissipation rating with adequate PCB copper and airflow.

There is no last-time-buy window, no end-of-life notice to track.

Mounting and thermal notes

Surface-mount package — no through-hole leads. For continuous operation near 4.6 A, plan for adequate copper on the drain connection to keep junction temperature below 150 °C.

Frequently asked questions

What is the Rds(on) of IRF6641TRPBF?

The maximum Rds(on) is 59.9 mOhm at 5.5 A drain current with a 10 V gate drive.

Does IRF6641TRPBF have a surface mount package?

Yes, the mounting type is Surface Mount, suitable for standard SMT reflow assembly.

What is the equivalent of IRF6641TRPBF?

Pin-compatible alternatives exist within the same 200 V N-channel HEXFET family; verify Rds(on) and gate charge against your load current and switching frequency to select the right variant.