200 V N-channel MOSFET for switched-mode and linear applications
The Infineon IRF6641TRPBF is a 200 V N-channel HEXFET power MOSFET rated for 4.6 A continuous drain current and a maximum Rds(on) of 59.9 mOhm at 10 V gate drive. It is built on the HEXFET trench technology, giving it a low gate charge of 48 nC at 10 V, which keeps switching losses manageable in hard-switched topologies like flyback converters, buck regulators, and motor-drive output stages. The surface-mount package fits standard reflow assembly, and the 150 °C junction temperature rating gives headroom in hot environments such as enclosed power supplies or industrial control cabinets.
59.9 mOhm Rds(on) — what it means for your BOM
At 5.5 A drain current and 10 V gate drive, the maximum on-resistance is 59.9 mOhm. Conduction loss at 5.5 A is within the 2.8 W package power dissipation rating with adequate PCB copper and airflow.
Active lifecycle — no obsolescence pressure
There is no last-time-buy window, no end-of-life notice to track. For BOM planning, this part can be specified into new designs without worrying about a near-term discontinuation.
Mounting and thermal notes
Surface-mount package — no through-hole leads. The drain is the large tab, so the PCB copper area under the part serves as the primary heatsink. For continuous operation near 4.6 A, plan for adequate copper on the drain connection to keep junction temperature below 150 °C.