The IRF6623TRPBF is an Infineon HEXFET® N-channel MOSFET rated for 20 V drain-source and 16 A continuous drain at 25 °C case temperature.
Gate drive and switching profile
Gate charge is 17 nC max at 4.5 V, and the drive voltage range (4.5 V to 10 V) covers both logic-level and standard gate-drive IC outputs. The 1360 pF input capacitance at 10 V drain-source means the driver sees a moderate capacitive load — a 1 A gate driver turns the FET on in roughly 17 ns. The ±20 V Vgs max gives headroom for ringing on long gate traces, though the 2.2 V threshold at 250 µA means the part is fully enhanced by a 3.3 V logic signal, so a dedicated driver is optional in low-frequency switching.
Thermal budget and package reality
The DirectFET Isometric ST package is a copper can with a solderable bottom — no plastic overmold, no wire bonds. The 42 W max dissipation at case temperature (Tc) assumes the can is soldered to a large copper pad on the PCB; the 1.4 W at ambient (Ta) is the free-air limit with no heatsink.