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Infineon Technologies IRF6618TRPBF — Discrete Semiconductors
Infineon Technologies

IRF6618TRPBF N-Channel Power MOSFET, 2.2 mOhm Rds(on), 30 V

MPNIRF6618TRPBF
Active

Infineon HEXFET IRF6618TRPBF N-Channel power MOSFET, 30 V drain-source, 30 A switching current, 2.2 mOhm Rds(on) max at 10 V gate drive, DirectFET surface-mount package, -40°C to 150°C junction temperature.

$1.15Ref. price · indicative, final on quote
IRF6618TRPBF datasheet
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

IRF6618TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting_typeSurface Mount
Operating temperature high-40°C to 150°C(TJ)
Vgs±20 V
Power_w2.8
Package_typeBulk
Capacitance_uf0.0056
Product_statusActive
Supply_voltage_v30.0
Vgs(Th) (Max) @ id2.35 V @ 250µA
Switching_current_a30.0
Rds on (Max) @ id, vgs2.2mOhm @ 30 A, 10 V
Gate charge (Qg) (Max) @ vgs65 nC @ 4.5 V

Product details

DirectFET N-channel — 30 V, 2.2 mOhm, 65 nC gate charge

The IRF6618TRPBF: Gate charge is 65 nC at 4.5 V.

Junction temperature and thermal budget

The DirectFET package is a surface-mount can with an exposed drain pad.

Gate drive and threshold

Gate threshold voltage is 2.35 V maximum at 250 µA drain current. The ±20 V Vgs rating allows 10 V gate drive.

Lifecycle and compliance

The part is RoHS-compliant and lead-free per the PbF suffix in the order code.

Frequently asked questions

What is the Rds(on) of IRF6618TRPBF at 10 V gate drive?

This is the rated value at 25°C junction temperature; expect the typical Rds(on) to be lower, but the max figure is the one to use for worst-case conduction loss calculations.