Infineon HEXFET IRF6618TRPBF N-Channel power MOSFET, 30 V drain-source, 30 A switching current, 2.2 mOhm Rds(on) max at 10 V gate drive, DirectFET surface-mount package, -40°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Operating temperature high | -40°C to 150°C(TJ) |
| Vgs | ±20 V |
| Power | 2.8 |
| Package_type | Bulk |
| Capacitance_uf | 0.0056 |
| Status | Active |
| Supply voltage | 30.0 |
| Vgs(Th) (Max) @ id | 2.35 V @ 250µA |
| Switching current | 30.0 |
| Rds on (Max) @ id, vgs | 2.2mOhm @ 30 A, 10 V |
| Gate charge (Qg) (Max) @ vgs | 65 nC @ 4.5 V |
The IRF6618TRPBF: Gate charge is 65 nC at 4.5 V.
The DirectFET package is a surface-mount can with an exposed drain pad.
The ±20 V Vgs rating allows 10 V gate drive.
The part is RoHS-compliant and lead-free per the PbF suffix in the order code.
This is the rated value at 25°C junction temperature; expect the typical Rds(on) to be lower, but the max figure is the one to use for worst-case conduction loss calculations.