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Infineon Technologies IRF6616TRPBF — Discrete Semiconductors
Infineon Technologies

IRF6616TRPBF HEXFET N-Channel MOSFET, 40 V, 5 mOhm

MPNIRF6616TRPBF
Active

IRF6616TRPBF, Infineon HEXFET N-channel MOSFET, 40 V, 19 A switching current, 5 mOhm Rds(on) at 10 V, 44 nC gate charge, surface mount, -40°C to 150°C junction temperature.

$1.15Ref. price · indicative, final on quote
IRF6616TRPBF datasheet
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRF6616TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting_typeSurface Mount
Operating temperature high-40°C to 150°C(TJ)
Vgs±20 V
Power_w2.8
Package_typeBulk
Capacitance_uf0.0038
Product_statusActive
Supply_voltage_v40.0
Vgs(Th) (Max) @ id2.25 V @ 250µA
Switching_current_a19.0
Rds on (Max) @ id, vgs5mOhm @ 19 A, 10 V
Gate charge (Qg) (Max) @ vgs44 nC @ 4.5 V

Product details

The IRF6616TRPBF is an Infineon HEXFET N-channel MOSFET rated for 40 V drain-source breakdown and 19 A switching current, with a maximum on-resistance of 5 mOhm at Vgs = 10 V and Id = 19 A. That Rds(on) figure is the key efficiency spec for a 40 V FET — it sets the conduction loss floor in a synchronous buck, OR-ing diode replacement, or load switch. Gate charge is 44 nC max at 4.5 V, which keeps the driver current manageable at moderate switching frequencies.

Junction temperature and thermal budget

Power dissipation is rated at 2.8 W, so the board copper and airflow need to keep the junction below that 150°C limit under full load.

Gate drive and switching considerations

Vgs absolute maximum is ±20 V, which gives margin for gate-drive overshoot in a 12 V or 10 V gate-drive system. The 44 nC gate charge at 4.5 V means a 1 A gate driver can switch the FET in about 44 ns — fast enough for a 100–200 kHz converter without excessive cross-conduction. The threshold voltage is 2.25 V max at 250 µA, so the FET is fully enhanced with a 5 V logic-level gate drive, but a 10 V drive is recommended to hit the rated Rds(on).

Frequently asked questions

What is the typical on-resistance (Rds(on)) of IRF6616TRPBF at 10 V gate drive?

The maximum Rds(on) is 5 mOhm at Vgs = 10 V and Id = 19 A. Typical values are lower, but the 5 mOhm max is the figure to use for worst-case conduction loss calculations.

Is IRF6616TRPBF RoHS compliant and lead-free?

The part is listed as RoHS compliant and lead-free per the product description. The 'TRPBF' suffix indicates lead-free plating.

Can IRF6616TRPBF be used as a replacement for IRF6616?

The IRF6616TRPBF is the lead-free variant of the base IRF6616. Electrical specifications (40 V, 5 mOhm, 19 A) are identical. The 'TRPBF' suffix denotes tape-and-reel packaging with lead-free plating. It is a direct functional replacement for the non-PBF version.