IRF6613TRPBF
Infineon Technologies · HEXFET® Series
MOSFET N-CH 40V 23A DIRECTFET
[IN STOCK] In Stock: 23 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 23A (Ta), 150A (Tc) |
| Power dissipation | 2.8W (Ta), 89W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | DirectFET™ Isometric MT |
| Vgs(th) (Max) @ id | 2.25V @ 250µA |
| Rds on (Max) @ id, vgs | 3.4mOhm @ 23A, 10V |
| Gate charge (Qg) (Max) @ vgs | 63 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 5950 pF @ 15 V |
IRF6613TRPBF
[ALLOC] verified