60 V, 58 A N-channel in a DPAK — the StrongIRFET™ workhorse
It comes in a DPAK (TO-252AA) surface-mount package — the tab is the drain, and the copper pad area under it sets the effective thermal resistance to the board.
Gate charge and switching — sizing the driver
Total gate charge is 66 nC at 10 V. For a 100 kHz switching frequency, the average gate-drive current needed is 6.6 mA — well within a standard MOSFET driver's capability, but the peak current from the driver's output capacitance must deliver that charge in the target rise time. The input capacitance is 2170 pF at 25 V drain bias, which also loads the driver's output stage during Miller-plateau transitions. The drive voltage range for achieving the rated Rds(on) is 6 V to 10 V; the 3.7 V gate threshold at 50 µA means the device is fully enhanced at 10 V but will start conducting well below that, so a pull-down resistor on the gate during power-up is recommended to prevent unintended turn-on.
Temperature range and deployment envelope
Without that thermal pad connection, the effective power rating drops significantly.