IRF5803TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® IRF5803TRPBF, P-Channel MOSFET, 40 V Vdss, 3.4 A Id, 112 mOhm Rds(on) at 10 V, SOT-23-6 Thin / TSOT-23-6, -55°C to 150°C.

Infineon Technologies IRF5803TRPBF
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRF5803TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C3.4A (Ta)
Power dissipation2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs112mOhm @ 3.4A, 10V
Gate charge (Qg) (Max) @ vgs37 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1110 pF @ 25 V

Technical details

IRF5803TRPBF
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