Infineon HEXFET® IRF5802TRPBF, N-Channel MOSFET, 150 Vdss, 900 mA Id, 1.2 Ohm Rds(on) at 10 V, 6.8 nC Qg, TSOT-23-6 package, -55°C to 150°C Tj.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 900mA (Ta) |
| Power dissipation | 2W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-23-6 Thin, TSOT-23-6 |
| Vgs(th) (Max) @ id | 5.5V @ 250µA |
| Rds on (Max) @ id, vgs | 1.2Ohm @ 540mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 88 pF @ 25 V |
With a maximum Rds(on) of 1.2 Ohm at a gate drive of 10 V and 540 mA drain current, the conduction loss at rated load is about 0.6 W — within the 2 W power dissipation limit of the TSOT-23-6 package, but with little headroom for ambient temperatures above 70 °C without derating.
The input capacitance is 88 pF at 25 V Vds, which keeps switching losses low in high-frequency converters.
The continuous drain current is 900 mA at 25 °C ambient, rated on the TSOT-23-6 package's 2 W power dissipation limit.
Yes — it is rated ROHS3 Compliant, covering the latest restricted-substance exemptions.