150 V drain-source in a TSOT-23-6 footprint
The IRF5802TRPBF is an N-Channel MOSFET from Infineon's HEXFET® series, rated for a drain-to-source voltage of 150 V and a continuous drain current of 900 mA at 25 °C. It is housed in a Micro6™ (TSOP-6) surface-mount package, making it a fit for compact power-switching stages where board area is at a premium — auxiliary supplies, DC-DC converters, and load switches in industrial or telecom equipment.
On-resistance and gate drive — the thermal budget
With a maximum Rds(on) of 1.2 Ohm at a gate drive of 10 V and 540 mA drain current, the conduction loss at rated load is about 0.6 W — within the 2 W power dissipation limit of the TSOT-23-6 package, but with little headroom for ambient temperatures above 70 °C without derating. The gate charge is 6.8 nC at 10 V, so a standard logic-level gate driver or a small-signal transistor can switch it at moderate frequencies without excessive drive loss.
Temperature range and operating environment
The input capacitance is 88 pF at 25 V Vds, which keeps switching losses low in high-frequency converters.