IRF5801TRPBF
Infineon Technologies · HEXFET® Series
MOSFET N-CH 200V 600MA MICRO6
[IN STOCK] In Stock: 27 pcs
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 600mA (Ta) |
| Power dissipation | 2W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-23-6 Thin, TSOT-23-6 |
| Vgs(th) (Max) @ id | 5.5V @ 250µA |
| Rds on (Max) @ id, vgs | 2.2Ohm @ 360mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 3.9 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 88 pF @ 25 V |
IRF5801TRPBF
[ALLOC] verified