IRF5801TRPBF - Infineon Technologies
MPNIRF5801TRPBF
End of Life
MOSFET N-CH 200V 600MA MICRO6
$0.58Ref. price · indicative, final on quote
PackagingSOT-23-6 Thin, TSOT-23-6
RoHSROHS3 Compliant
SeriesHEXFET®
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 600mA (Ta) |
| Power dissipation | 2W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-23-6 Thin, TSOT-23-6 |
| Vgs(th) (Max) @ id | 5.5V @ 250µA |
| Rds on (Max) @ id, vgs | 2.2Ohm @ 360mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 3.9 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 88 pF @ 25 V |