Infineon HEXFET IRF5210PBF, P-Channel MOSFET, 100 V Vdss, 40 A Id, 60 mOhm Rds(on) at 10 V, TO-220-3, Through Hole, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 40A (Tc) |
| Power dissipation | 200W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 60mOhm @ 24A, 10V |
| Gate charge (Qg) (Max) @ vgs | 180 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2700 pF @ 25 V |
The gate can tolerate ±20 V.
Maximum power dissipation is 200 W at case temperature, but the junction-to-ambient thermal path through the TO-220AB package limits practical continuous dissipation to well below that without a heatsink. A thermal pad or mica insulator with grease is standard for heatsink attachment.
To validate conduction losses in circuit design.
To ensure it meets the voltage rating of the application.
For budget and availability check before ordering.
To locate a supplier with the best price and lead time.
To find alternate parts if original is out of stock or for cost reduction.
For quick replacement of failed component with a different suffix.