Gate drive and switching budget
The IRF5210PBF: Gate threshold voltage is 4 V maximum at 250 µA drain current, and the recommended drive voltage for rated Rds(on) is 10 V. The gate can tolerate ±20 V. Total gate charge is 180 nC at 10 V; input capacitance is 2700 pF at 25 V drain-source.
Thermal and package constraints
Maximum power dissipation is 200 W at case temperature, but the junction-to-ambient thermal path through the TO-220AB package limits practical continuous dissipation to well below that without a heatsink. The operating junction range is -55 °C to 175 °C, suitable for industrial and automotive environments. A thermal pad or mica insulator with grease is standard for heatsink attachment.
