Infineon Technologies · HEXFET® Series
Infineon HEXFET IRF5210PBF, P-Channel MOSFET, 100 V Vdss, 40 A Id, 60 mOhm Rds(on) at 10 V, TO-220-3, Through Hole, -55°C to 175°C.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 40A (Tc) |
| Power dissipation | 200W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 60mOhm @ 24A, 10V |
| Gate charge (Qg) (Max) @ vgs | 180 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2700 pF @ 25 V |
Package: TO-220AB · Pin-compatible replacements with immediate Shenzhen spot stock
The P-channel TO-220 row is the high-side switch of practical electronics: loads that must sit above ground and switch on the positive rail, driven straight from logic with a level-shifting transistor and no bootstrap - the circuit simplicity that keeps these parts alive in 12V and 24V designs. The IRF9540 is the classic -100V face of the row (the P-counterpart of the IRF540 lineage) and its on-resistance shows the age; the IRF4905 is the modern brute (-74A at 20 milliohms, but only -55V) and the IRF5210 the middle ground that keeps the 100V rating with triple the original conductance. All three are standard-drive parts, and every substitution in this row is decided by two numbers: rail voltage and the gate drive actually available.
The Modern Brute - Watch the Voltage Ceiling
Shenzhen Spot Stock (24-48h Dispatch)
The high-current member: -55V / -74A with on-resistance about 20 milliohms at -10V gate - ten times the conductance of the IRF9540, with a gate charge (120-180nC) to match.
The -55V ceiling caps it at 48V rails and below - the whole trade against the 9540s -100V.
The 100V Middle Ground
Shenzhen Spot Stock (24-48h Dispatch)
The balanced member: -100V / -40A with about 60 milliohms at -10V - three times the IRF9540s conductance at the same voltage rating and similar power class.
Full -100V class; the direct answer where a 9540 ran hot but the rail forbids the 4905.
The Lighter Original Sibling
Shenzhen Spot Stock (24-48h Dispatch)
The -100V / -12A member of the same original generation: the same vintage 200-milliohm-class on-resistance at lower current - the part where a 9540 design was already at the edge.
Same -100V class.
Q: What is the difference between IRF9540 and IRF4905?
A: Voltage and conductance: IRF9540 is -100V / -19A at about 200 milliohms, IRF4905 is -55V / -74A at about 20. The 4905 is the modern low-loss part but only suits rails to 48V; the 9540 survives the higher-voltage rails it was designed for.
Q: Can I drive an IRF9540 directly from a 5V microcontroller?
A: Not properly - the family is standard-drive (on-resistance at -10V gate). Use an NPN or small-MOSFET level shifter with a pull-up to the source rail so the gate actually swings below the source. Direct 5V drive leaves the channel partially enhanced and the part hot.
Q: When should I use N-channel instead of P-channel for high-side switching?
A: Above roughly 5-10A of load: N-channel conductance is several times better at equal die area, in exchange for a bootstrap or charge-pump gate supply. The P-channel row wins below that by circuit simplicity, not by efficiency.
The gate can tolerate ±20 V.
Maximum power dissipation is 200 W at case temperature, but the junction-to-ambient thermal path through the TO-220AB package limits practical continuous dissipation to well below that without a heatsink. A thermal pad or mica insulator with grease is standard for heatsink attachment.
