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Infineon Technologies IRF4905PBF

IRF4905PBF P-Channel MOSFET, 55 V, 74 A, TO-220AB

MPNIRF4905PBF
End of Life

Infineon HEXFET® IRF4905PBF, P-Channel MOSFET, 55 V Vdss, 74 A Id, 20 mOhm Rds(on) at 10 V, 180 nC Qg, TO-220AB through-hole package, -55°C to 175°C.

$2.25Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRF4905PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeP-Channel
Mounting typeThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C74A (Tc)
Power dissipation200W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs20mOhm @ 38A, 10V
Gate charge (Qg) (Max) @ vgs180 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3400 pF @ 25 V

Product details

P-channel power switch for high-current DC rails

The IRF4905PBF: Gate charge totals 180 nC at 10 V, so the gate driver must supply enough peak current to charge the input capacitance (3400 pF typical at 25 V) within the target switching interval.

Thermal and package constraints for the board

Maximum power dissipation is 200 W at case temperature 25°C — derate linearly with rising Tc; the TO-220AB tab must be heatsunk or the junction temperature will exceed the 175°C absolute maximum under sustained load. The through-hole TO-220AB package suits point-of-load or chassis-mount layouts where a screw or clip secures the tab to a heatsink.

Frequently asked questions

What is the Rds(on) of IRF4905PBF?

This value is specified at 25°C junction temperature; Rds(on) increases with temperature per the normalised curve in the datasheet.