Infineon HEXFET® IRF4905PBF, P-Channel MOSFET, 55 V Vdss, 74 A Id, 20 mOhm Rds(on) at 10 V, 180 nC Qg, TO-220AB through-hole package, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 74A (Tc) |
| Power dissipation | 200W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 20mOhm @ 38A, 10V |
| Gate charge (Qg) (Max) @ vgs | 180 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3400 pF @ 25 V |
The IRF4905PBF: Gate charge totals 180 nC at 10 V, so the gate driver must supply enough peak current to charge the input capacitance (3400 pF typical at 25 V) within the target switching interval.
The through-hole TO-220AB package suits point-of-load or chassis-mount layouts where a screw or clip secures the tab to a heatsink.
This value is specified at 25°C junction temperature; Rds(on) increases with temperature per the normalised curve in the datasheet.