P-channel 55V 42A — conduction loss and package
The 20 mOhm maximum on-resistance at 42 A with 10 V gate drive sets the conduction loss floor for high-side switching, reverse-battery protection, and load-switch applications where a P-channel simplifies the gate drive by avoiding a charge pump.
Gate charge and switching drive
Total gate charge is 180 nC at 10 V, with input capacitance at 3500 pF measured at 25 V drain-source. For a 100 kHz switching frequency, the average gate drive current needed is 18 mA — well within the capability of a standard MOSFET driver. The ±20 V maximum gate-source rating provides margin for gate-drive transients in noisy environments.
Temperature range and power dissipation
Maximum power dissipation is 170 W at case temperature, derated above that point per the datasheet curve. The TO-262 through-hole package (I²Pak) provides a low thermal resistance path to a heatsink via the exposed metal tab.
Lifecycle and compliance
It is ROHS3 compliant, and the TO-262 package is standard through-hole for automated or manual assembly.