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Infineon Technologies IRF4905LPBF

IRF4905LPBF P-Channel MOSFET, 55V 42A, 20mOhm Rds(on)

MPNIRF4905LPBF
End of Life

Infineon IRF4905LPBF, HEXFET series, P-Channel MOSFET, 55V Vdss, 42A Id, 20mOhm Rds(on) @ 42A/10V, 180nC Qg, TO-262-3 through-hole package, -55°C to 150°C junction temperature.

$3.11Ref. price · indicative, final on quote
Infineon Technologies IRF4905LPBF datasheet (PDF)
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF4905LPBF specifications
ParameterValue
SeriesHEXFET®
FET typeP-Channel
MountingThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C42A (Tc)
Power dissipation170W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs20mOhm @ 42A, 10V
Gate charge (Qg) (Max) @ vgs180 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3500 pF @ 25 V

Product details

P-channel 55V 42A — conduction loss and package

Gate charge and switching drive

Total gate charge is 180 nC at 10 V, with input capacitance at 3500 pF measured at 25 V drain-source.

Temperature range and power dissipation

Maximum power dissipation is 170 W at case temperature, derated above that point per the datasheet curve. The TO-262 through-hole package (I²Pak) provides a low thermal resistance path to a heatsink via the exposed metal tab.

It is ROHS3 compliant, and the TO-262 package is standard through-hole for automated or manual assembly.

Frequently asked questions

Is IRF4905LPBF RoHS compliant?

Yes, the IRF4905LPBF is ROHS3 compliant. The 'PBF' suffix in the order code indicates lead-free (Pb-free) plating on the terminals.