IRF4104PBF

Infineon Technologies · HEXFET® Series

MOSFET N-CH 40V 75A TO220AB

Infineon Technologies IRF4104PBF
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Technical specifications

IRF4104PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation140W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs5.5mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs100 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3000 pF @ 25 V
IRF4104PBF
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