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Infineon Technologies IRF40R207

IRF40R207 MOSFET N-Channel 40V 56A TO-252, Active

MPNIRF40R207
End of Life

Infineon IRF40R207, HEXFET® StrongIRFET™ series, N-Channel MOSFET, 40V Vdss, 56A Id, 5.1mOhm Rds(on) @ 10V, TO-252-3 (DPak) surface-mount, -55°C to 175°C junction temp.

$1.12Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF40R207 Technical Specifications
ParameterValue
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C56A (Tc)
Power dissipation83W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.9V @ 50µA
Rds on (Max) @ id, vgs5.1mOhm @ 55A, 10V
Gate charge (Qg) (Max) @ vgs68 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2110 pF @ 25 V

Product details

What this N-channel MOSFET brings to a 40V rail

The Infineon IRF40R207 is a 40V N-channel MOSFET from the HEXFET® and StrongIRFET™ series, rated for 56A continuous drain current at 25°C case temperature. Its 5.1 mOhm maximum on-resistance at 55A and 10V gate drive keeps conduction losses low in high-current paths like motor drives, DC-DC converters, and battery management systems. The TO-252-3 (DPak) surface-mount package suits automated assembly and board-level rework.

Ratings that matter for the BOM

The 40V drain-source rating gives headroom on 24V and 36V rails; the 56A continuous current at 25°C case temperature covers most motor-drive and power-switching loads up to that voltage. Gate charge of 68 nC at 10V means a standard gate driver can switch it without excessive drive current, though the 2110 pF input capacitance at 25V drain-source should be factored into switching-loss calculations. The 83W power dissipation at case temperature sets the heatsink requirement — plan for thermal management if running near the current limit continuously.

Temperature grade and deployment environment

Junction temperature range is -55°C to 175°C.

Lifecycle and sourcing reality

No last-time-buy risk for current designs.

Frequently asked questions

Is IRF40R207 RoHS compliant?

Yes, it is ROHS3 compliant.

What are the alternatives for IRF40R207?

Within the same HEXFET® StrongIRFET™ family, pin-compatible 40V N-channel MOSFETs with similar Rds(on) and current ratings are available; check the Infineon product selector for specific current and package variants.

Can IRF40R207 be used in motor drives?

Yes, its 40V rating, 56A current capability, and 5.1 mOhm Rds(on) make it suitable for 24V and 36V motor drives, provided the switching frequency and thermal limits are respected.