IRF40R207

Infineon Technologies · HEXFET®, StrongIRFET™ Series

Infineon IRF40R207, HEXFET® StrongIRFET™ series, N-Channel MOSFET, 40V Vdss, 56A Id, 5.1mOhm Rds(on) @ 10V, TO-252-3 (DPak) surface-mount, -55°C to 175°C junction temp.

Infineon Technologies IRF40R207
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[IN STOCK] In Stock: 70 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRF40R207 specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C56A (Tc)
Power dissipation83W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.9V @ 50µA
Rds on (Max) @ id, vgs5.1mOhm @ 55A, 10V
Gate charge (Qg) (Max) @ vgs68 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2110 pF @ 25 V

Technical details

What this N-channel MOSFET brings to a 40V rail

Its 5.1 mOhm maximum on-resistance at 55A and 10V gate drive keeps conduction losses low in high-current paths like motor drives, DC-DC converters, and battery management systems. The TO-252-3 (DPak) surface-mount package suits automated assembly and board-level rework.

Ratings that matter for the BOM

The 40V drain-source rating gives headroom on 24V and 36V rails; the 56A continuous current at 25°C case temperature covers most motor-drive and power-switching loads up to that voltage. Gate charge of 68 nC at 10V means a standard gate driver can switch it without excessive drive current, though the 2110 pF input capacitance at 25V drain-source should be factored into switching-loss calculations. The 83W power dissipation at case temperature sets the heatsink requirement — plan for thermal management if running near the current limit continuously.

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IRF40R207
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