IRF3808STRLPBF

Infineon Technologies · HEXFET® Series

IRF3808STRLPBF, HEXFET series, N-Channel MOSFET, 75 V Vdss, 106 A continuous drain, 7 mOhm Rds(on) at 10 V, D2PAK surface-mount, -55°C to 175°C junction temperature.

Infineon Technologies IRF3808STRLPBF
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[IN STOCK] In Stock: 9 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRF3808STRLPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C106A (Tc)
Power dissipation200W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs7mOhm @ 82A, 10V
Gate charge (Qg) (Max) @ vgs220 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5310 pF @ 25 V

Technical details

75 V, 106 A N-channel power MOSFET in D2PAK

It is housed in a D2PAK (TO-263-3) surface-mount package, suited for high-current power switching in motor drives, DC-DC converters, and battery management systems where board space is constrained.

Conduction loss and gate drive budget

The 220 nC total gate charge at 10 V means the gate driver must supply roughly 2.2 µC per switching cycle — at 100 kHz switching frequency that translates to 220 mA average drive current, which a standard totem-pole driver can handle but a logic-output gate driver cannot. The 5310 pF input capacitance at 25 V drain bias sets the switching energy; expect miller-plateau duration around 50–80 ns with a 10 A gate driver, which is acceptable for hard-switched topologies up to about 150 kHz.

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