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Infineon Technologies IRF3808STRLPBF

IRF3808STRLPBF HEXFET N-Channel MOSFET, 75 V, 106 A, D2PAK

MPNIRF3808STRLPBF
End of Life

IRF3808STRLPBF, HEXFET series, N-Channel MOSFET, 75 V Vdss, 106 A continuous drain, 7 mOhm Rds(on) at 10 V, D2PAK surface-mount, -55°C to 175°C junction temperature.

$2.95Ref. price · indicative, final on quote
Infineon Technologies IRF3808STRLPBF datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF3808STRLPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C106A (Tc)
Power dissipation200W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs7mOhm @ 82A, 10V
Gate charge (Qg) (Max) @ vgs220 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5310 pF @ 25 V

Product details

75 V, 106 A N-channel power MOSFET in D2PAK

It is housed in a D2PAK (TO-263-3) surface-mount package, suited for high-current power switching in motor drives, DC-DC converters, and battery management systems where board space is constrained.

Conduction loss and gate drive budget

The 220 nC total gate charge at 10 V means the gate driver must supply roughly 2.2 µC per switching cycle — at 100 kHz switching frequency that translates to 220 mA average drive current, which a standard totem-pole driver can handle but a logic-output gate driver cannot. The 5310 pF input capacitance at 25 V drain bias sets the switching energy; expect miller-plateau duration around 50–80 ns with a 10 A gate driver, which is acceptable for hard-switched topologies up to about 150 kHz.

Frequently asked questions

What is the RDS(on) for IRF3808STRLPBF?

This is the figure to use for worst-case conduction loss calculations at 25°C junction; expect the on-resistance to approximately double at 175°C junction temperature.

What is the replacement for IRF3808STRLPBF?

No official replacement or successor is listed for the IRF3808STRLPBF. The peer IPD50R950CEAUMA1 is a 500 V CoolMOS device with 950 mOhm Rds(on) — it is not a functional substitute for this 75 V, 7 mOhm part. For a drop-in alternative, confirm pin-compatibility and parametric overlap with the original BOM.