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Infineon Technologies IRF3808STRLPBF

IRF3808STRLPBF HEXFET N-Channel MOSFET, 75 V, 106 A, D2PAK

MPNIRF3808STRLPBF
End of Life

IRF3808STRLPBF, HEXFET series, N-Channel MOSFET, 75 V Vdss, 106 A continuous drain, 7 mOhm Rds(on) at 10 V, D2PAK surface-mount, -55°C to 175°C junction temperature.

$2.95Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRF3808STRLPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C106A (Tc)
Power dissipation200W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs7mOhm @ 82A, 10V
Gate charge (Qg) (Max) @ vgs220 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5310 pF @ 25 V

Product details

75 V, 106 A N-channel power MOSFET in D2PAK

It is housed in a D2PAK (TO-263-3) surface-mount package, suited for high-current power switching in motor drives, DC-DC converters, and battery management systems where board space is constrained.

Conduction loss and gate drive budget

The 220 nC total gate charge at 10 V means the gate driver must supply roughly 2.2 µC per switching cycle — at 100 kHz switching frequency that translates to 220 mA average drive current, which a standard totem-pole driver can handle but a logic-output gate driver cannot. The 5310 pF input capacitance at 25 V drain bias sets the switching energy; expect miller-plateau duration around 50–80 ns with a 10 A gate driver, which is acceptable for hard-switched topologies up to about 150 kHz.

Temperature range and deployment environment

The 200 W maximum power dissipation at case temperature assumes an infinite heatsink — real designs must derate based on the thermal resistance of the D2PAK footprint on the PCB.

Frequently asked questions

What is the RDS(on) for IRF3808STRLPBF?

This is the figure to use for worst-case conduction loss calculations at 25°C junction; expect the on-resistance to approximately double at 175°C junction temperature.

What is the replacement for IRF3808STRLPBF?

No official replacement or successor is listed for the IRF3808STRLPBF. The peer IPD50R950CEAUMA1 is a 500 V CoolMOS device with 950 mOhm Rds(on) — it is not a functional substitute for this 75 V, 7 mOhm part. For a drop-in alternative, confirm pin-compatibility and parametric overlap with the original BOM.