IRF3808PBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET IRF3808PBF, N-Channel MOSFET, 75V Vdss, 140A Id, 7mOhm Rds(on) max @ 82A, 10V, TO-220AB package, -55°C to 175°C junction temperature.

Infineon Technologies IRF3808PBF
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[IN STOCK] In Stock: 88 pcs
$2.66/ pc

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Technical specifications

IRF3808PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C140A (Tc)
Power dissipation330W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs7mOhm @ 82A, 10V
Gate charge (Qg) (Max) @ vgs220 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5310 pF @ 25 V

Technical details

What the gate charge and capacitance mean for the driver

The 220 nC figure also sets the gate-drive power loss: at 100 kHz, the driver dissipates about 220 mW just charging and discharging the gate, which matters for the driver's thermal budget.

Temperature range and the real current limit

The 140 A continuous rating is at 25°C case temperature — in a real board with a heatsink, the allowable current derates as the junction rises. At 100°C case temperature, the current capability drops to roughly 100 A, depending on the thermal resistance of the mounting interface. The 175°C maximum junction lets the part survive overload conditions that would kill a 150°C-rated MOSFET, but continuous operation near that ceiling requires a substantial heatsink and forced airflow.

Active production — no LTB scramble on this BOM line

For a repair bench or a production BOM, this means the part can be sourced through standard distribution without worrying about a looming obsolescence window. The TO-220AB package is a common footprint, so second-sourcing from other manufacturers with compatible pinouts is straightforward if dual-source security is needed.

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