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Infineon Technologies IRF3808PBF

IRF3808PBF MOSFET, N-Channel 75V 140A TO-220AB

MPNIRF3808PBF
End of Life

Infineon HEXFET IRF3808PBF, N-Channel MOSFET, 75V Vdss, 140A Id, 7mOhm Rds(on) max @ 82A, 10V, TO-220AB package, -55°C to 175°C junction temperature.

$3.18Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF3808PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C140A (Tc)
Power dissipation330W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs7mOhm @ 82A, 10V
Gate charge (Qg) (Max) @ vgs220 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5310 pF @ 25 V

Product details

What the gate charge and capacitance mean for the driver

Total gate charge is 220 nC at 10 V, with an input capacitance of 5310 pF at 25 V drain-source. For a 100 kHz switching frequency, the average gate-drive current needed is 22 mA — a standard gate-driver IC handles that, but the peak current during the Miller plateau determines the switching speed. The 220 nC figure also sets the gate-drive power loss: at 100 kHz, the driver dissipates about 220 mW just charging and discharging the gate, which matters for the driver's thermal budget.

Temperature range and the real current limit

Junction temperature range is -55°C to 175°C, with a maximum power dissipation of 330 W at the case. The 140 A continuous rating is at 25°C case temperature — in a real board with a heatsink, the allowable current derates as the junction rises. At 100°C case temperature, the current capability drops to roughly 100 A, depending on the thermal resistance of the mounting interface. The 175°C maximum junction lets the part survive overload conditions that would kill a 150°C-rated MOSFET, but continuous operation near that ceiling requires a substantial heatsink and forced airflow.

Active production — no LTB scramble on this BOM line

For a repair bench or a production BOM, this means the part can be sourced through standard distribution without worrying about a looming obsolescence window. The TO-220AB package is a common footprint, so second-sourcing from other manufacturers with compatible pinouts is straightforward if dual-source security is needed.

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