IRF3805STRLPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET N-Channel MOSFET, IRF3805STRLPBF, 55 V Vdss, 75 A continuous drain, 3.3 mOhm Rds(on) at 10 V, D2PAK surface mount, -55°C to 175°C junction temperature.

Infineon Technologies IRF3805STRLPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRF3805STRLPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs3.3mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs290 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7960 pF @ 25 V

Technical details

IRF3805STRLPBF
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