Infineon HEXFET IRF3805PBF, N-Channel MOSFET, 55 V Vdss, 75 A continuous drain, 3.3 mOhm Rds(on) at 10 V, 290 nC gate charge, TO-220AB through-hole package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 75A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 3.3mOhm @ 75A, 10V |
| Gate charge (Qg) (Max) @ vgs | 290 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7960 pF @ 25 V |
Housed in a TO-220AB through-hole package, the IRF3805PBF is designed for board-level mounting where the tab is soldered to a heatsink pad or clamped to a chassis. The 300 W power dissipation at case temperature is the thermal budget ceiling; the actual dissipation depends on the heatsink's thermal resistance.
This value is measured at 25°C junction temperature; actual Rds(on) increases with temperature per the normalised curve in the datasheet.
Yes, the IRF3805PBF is listed as ROHS3 compliant.