Infineon HEXFET IRF3710ZSTRLPBF, N-Channel MOSFET, 100 V Vdss, 59 A Id, 18 mOhm Rds(on) at 10 V, D2PAK (TO-263), -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 59A (Tc) |
| Power dissipation | 160W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 18mOhm @ 35A, 10V |
| Gate charge (Qg) (Max) @ vgs | 120 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2900 pF @ 25 V |
Total gate charge is 120 nC at 10 V.
Surface-mount D2PAK (TO-263-3) with two leads and a tab. Preheating the board to 125 °C before hot-air removal prevents the tab from wicking heat away and cracking the solder joint on the opposite side. The tab's thermal mass means a standard hot-air station at 350 °C with a 10 mm nozzle will lift the part cleanly if the board is preheated; without preheat, expect to chase a cold joint on the tab.
The IRF3710ZSTRLPBF is a surface-mount D2PAK variant of the IRF3710 family. The IRF3710 is typically a through-hole TO-220 package; the die and ratings are similar, but the package footprint and thermal interface differ. Confirm the PCB pad layout and thermal design before substituting.
The part is ROHS3 compliant, meaning it meets the lead-free and restricted-substance requirements of the ROHS directive.