Infineon Technologies · HEXFET® Series
Infineon HEXFET IRF3710ZSTRLPBF, N-Channel MOSFET, 100 V Vdss, 59 A Id, 18 mOhm Rds(on) at 10 V, D2PAK (TO-263), -55 to 175 °C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 59A (Tc) |
| Power dissipation | 160W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 18mOhm @ 35A, 10V |
| Gate charge (Qg) (Max) @ vgs | 120 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2900 pF @ 25 V |
Total gate charge is 120 nC at 10 V.
Surface-mount D2PAK (TO-263-3) with two leads and a tab. Preheating the board to 125 °C before hot-air removal prevents the tab from wicking heat away and cracking the solder joint on the opposite side. The tab's thermal mass means a standard hot-air station at 350 °C with a 10 mm nozzle will lift the part cleanly if the board is preheated; without preheat, expect to chase a cold joint on the tab.
