Gate charge and switching — sizing the driver
The IRF3710STRLPBF: Total gate charge is 130 nC at 10 V.
Temperature range and package — where it survives
Junction temperature range is -55°C to 175°C.
IRF3710STRLPBF
Infineon Technologies · HEXFET® Series
Infineon IRF3710STRLPBF, HEXFET® series, N-Channel MOSFET, 100 V Vdss, 57 A Id, 23 mOhm Rds(on) at 10 V, D2PAK (TO-263-3), -55°C to 175°C Tj.
[IN STOCK] In Stock: 1,265 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 57A (Tc) |
| Power dissipation | 200W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 23mOhm @ 28A, 10V |
| Gate charge (Qg) (Max) @ vgs | 130 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3130 pF @ 25 V |
Technical details
IRF3710STRLPBF
[ALLOC] verified