Gate charge and switching — sizing the driver
The IRF3710STRLPBF: Total gate charge is 130 nC at 10 V. Input capacitance is 3130 pF at 25 V drain bias.
Temperature range and package — where it survives
Junction temperature range is -55°C to 175°C.
Infineon IRF3710STRLPBF, HEXFET® series, N-Channel MOSFET, 100 V Vdss, 57 A Id, 23 mOhm Rds(on) at 10 V, D2PAK (TO-263-3), -55°C to 175°C Tj.
$1.86Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
- 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
- Date & lot codes on quoteStated per line before you commit; label photos on request.
- MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
- PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.
Specifications
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 57A (Tc) |
| Power dissipation | 200W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 23mOhm @ 28A, 10V |
| Gate charge (Qg) (Max) @ vgs | 130 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3130 pF @ 25 V |
Product details
Frequently asked questions
Can I use the IRF3710STRLPBF as a replacement for the IRF3710PBF?
The IRF3710STRLPBF and IRF3710PBF share the same silicon — the difference is the packaging and shipping format. The STRLPBF suffix indicates Tape & Reel packaging, while the PBF suffix typically indicates a tube or bulk shipment. Electrically they are identical, so the STRLPBF is a drop-in replacement for the PBF variant in the same D2PAK footprint.