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Infineon Technologies IRF3709ZPBF — Discrete Semiconductors
Infineon Technologies

IRF3709ZPBF MOSFET N-CH 30V 87A TO220AB, 6.3 mOhm Rds(on)

MPNIRF3709ZPBF
Active

Infineon HEXFET series, IRF3709ZPBF, N-Channel MOSFET, 30 V drain-source, 87 A switching current, 6.3 mOhm Rds(on) at 10 V, TO-220AB through-hole package, -55°C to 175°C junction temperature.

$0.43Ref. price · indicative, final on quote
IRF3709ZPBF datasheet
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

IRF3709ZPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting_typeThrough Hole
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power_w79.0
Package_typeBulk
Capacitance_uf0.0021
Product_statusActive
Supply_voltage_v30.0
Vgs(Th) (Max) @ id2.25 V @ 250µA
Switching_current_a87.0
Rds on (Max) @ id, vgs6.3mOhm @ 21 A, 10 V
Gate charge (Qg) (Max) @ vgs26 nC @ 4.5 V

Product details

30 V, 87 A N-channel — the low-voltage workhorse

The IRF3709ZPBF is an N-channel HEXFET power MOSFET from Infineon, rated at 30 V drain-source and 87 A switching current in a TO-220AB through-hole package.

At 21 A drain current with 10 V on the gate, the IRF3709ZPBF guarantees a maximum on-resistance of 6.3 mOhm. That translates to about 2.8 W conduction loss at 21 A — well within the 79 W power dissipation rating of the TO-220 package when properly heatsunk. The low Rds(on) also means the part can handle pulsed currents well above the 87 A continuous rating without exceeding the junction temperature ceiling.

Gate drive at 4.5 V — logic-level capable

With a maximum gate charge of 26 nC at 4.5 V, this MOSFET can be driven directly from a 5 V microcontroller output or a 3.3 V logic gate without a separate driver IC. The threshold voltage is specified at 2.25 V max at 250 µA, so it turns on hard with a 5 V gate signal. This simplifies the BOM for battery-powered or low-voltage control circuits.

Sourcing and lifecycle

No official second source or direct replacement is listed in the family, so confirm pin-compatibility with any alternative before substituting.

Frequently asked questions

What is the Rds(on) of IRF3709ZPBF?

The maximum on-resistance is 6.3 mOhm at a drain current of 21 A with 10 V gate-to-source drive.

Is IRF3709ZPBF a logic-level MOSFET?

Yes — the maximum gate threshold voltage is 2.25 V at 250 µA, and the gate charge is specified at 4.5 V, so it can be driven directly from 5 V or 3.3 V logic without a separate gate driver.