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Infineon Technologies IRF3703PBF

IRF3703PBF HEXFET N-Ch MOSFET, 30V 210A TO-220AB, 2.8 mOhm

MPNIRF3703PBF
End of Life

Infineon HEXFET® IRF3703PBF, N-Channel MOSFET, 30 V Vdss, 210 A continuous drain, 2.8 mOhm Rds(on) max at 10 V, 209 nC gate charge, TO-220-3 / TO-220AB through-hole, -55°C to 175°C.

$3.34Ref. price · indicative, final on quote
Infineon Technologies IRF3703PBF datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF3703PBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)7V, 10V
Current - continuous drain (Id) @ 25°C210A (Tc)
Power dissipation3.8W (Ta), 230W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs2.8mOhm @ 76A, 10V
Gate charge (Qg) (Max) @ vgs209 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8250 pF @ 25 V

Product details

2.8 mOhm Rds(on) — the headline that matters

The IRF3703PBF is an Infineon HEXFET N-channel MOSFET in a TO-220AB through-hole package.

Gate charge and drive — what 209 nC means for the driver

The input capacitance is 8250 pF at 25 V drain-source.

175 °C junction — thermal headroom for power-dense builds

It is ROHS3 compliant.

Through-hole TO-220 — field-swappable, no hot-air needed

The TO-220-3 / TO-220AB package is a through-hole part with a metal tab for screw-mounting to a heatsink. That means it can be replaced on site with a soldering iron and a screwdriver — no reflow oven, no hot-air station. For field-service repairs, this part goes into the kit without hesitation.

Frequently asked questions

What is the Rds(on) of IRF3703PBF?

That is the figure that defines its conduction loss in high-current switching applications.