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Infineon Technologies IRF362 — Discrete Semiconductors
Infineon Technologies

IRF362 N-Channel MOSFET, 400 V, 22 A, 300 W, TO-3

MPNIRF362
Active

IRF362, N-Channel HEXFET MOSFET, 400 V drain-source, 22 A continuous drain, 300 W power dissipation, Through Hole, TO-3 package, Active lifecycle.

$9.17Ref. price · indicative, final on quote
IRF362 datasheet
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRF362 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting_typeThrough Hole
Power_w300.0
Package_typeBulk
Product_statusActive
Supply_voltage_v400.0
Switching_current_a22.0

Product details

300 W N-channel HEXFET in a hermetic TO-3

The IRF362 is an N-channel enhancement-mode power MOSFET built on the HEXFET structure, housed in a hermetic TO-3 package. It is rated for 400 V drain-source breakdown voltage and 22 A continuous drain current, with a 300 W power dissipation capability at 25 °C case temperature.

Hermetic package for high-reliability environments

The TO-3 package is a metal-can, through-hole design with a hermetic seal. This construction makes the IRF362 suitable for military, aerospace, and industrial applications where moisture, vibration, and thermal cycling resistance are required.

Frequently asked questions

What are the key ratings of IRF362?

The IRF362 is an N-channel HEXFET MOSFET rated for 400 V drain-source voltage, 22 A continuous drain current, and 300 W power dissipation at 25 °C case temperature.