300 W N-channel HEXFET in a hermetic TO-3
The IRF362 is an N-channel enhancement-mode power MOSFET built on the HEXFET structure, housed in a hermetic TO-3 package. It is rated for 400 V drain-source breakdown voltage and 22 A continuous drain current, with a 300 W power dissipation capability at 25 °C case temperature.
Hermetic package for high-reliability environments
The TO-3 package is a metal-can, through-hole design with a hermetic seal. This construction makes the IRF362 suitable for military, aerospace, and industrial applications where moisture, vibration, and thermal cycling resistance are required.