100 V / 103 A N-channel power switch — active HEXFET
The IRF3610STRLPBF is an Infineon HEXFET N-channel power MOSFET rated for 100 V drain-to-source breakdown and 103 A continuous drain current at case temperature.
The 11.6 mOhm Rds(on) at 62 A and 10 V gate is the spec to design around for conduction loss. At full 103 A the on-resistance will rise above this value due to self-heating — the datasheet normalised curve shows the multiplier at 125 °C junction. The total gate charge of 150 nC at 10 V means the gate driver must source and sink that charge each switching cycle; at 100 kHz the average gate drive current is 15 mA, well within a standard driver's capability, but the 5380 pF input capacitance adds to the driver's peak current demand at the Miller plateau.
Package and mounting — D2Pak thermal and footprint check
Surface-mount D2Pak (TO-263-3) with a single drain tab and two source leads. The supplier device package is PG-TO263-3.
ROHS3 compliant per the listing.
