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Infineon Technologies IRF3415STRLPBF

IRF3415STRLPBF MOSFET N-Ch 150V 43A D2PAK HEXFET

MPNIRF3415STRLPBF
End of Life

IRF3415STRLPBF, HEXFET® N-Channel MOSFET, 150 V Vdss, 43 A continuous drain, 42 mOhm Rds(on) at 10 V gate drive, D2PAK (TO-263) surface mount, -55°C to 175°C junction temperature.

$2.28Ref. price · indicative, final on quote
Infineon Technologies IRF3415STRLPBF datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF3415STRLPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C43A (Tc)
Power dissipation3.8W (Ta), 200W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs42mOhm @ 22A, 10V
Gate charge (Qg) (Max) @ vgs200 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2400 pF @ 25 V

Product details

Gate drive and switching behaviour

The gate is driven with 10 V for the rated Rds(on) — the ±20 V Vgs(max) gives headroom for gate-drive transients. Total gate charge is 200 nC at 10 V, so the driver must supply about 2 A peak to switch at 100 kHz; a lower gate-drive voltage like 5 V will not fully enhance the channel and the on-resistance rises significantly.

Thermal budget and package

The D2PAK (TO-263) surface-mount package dissipates 3.8 W in still air at 25°C ambient, but with a proper copper pad and vias to a heatsink plane, the junction-to-case rating of 200 W at 25°C case temperature is the real limit.

It is ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of IRF3415STRLPBF?

The maximum Rds(on) is 42 mOhm at 22 A drain current with 10 V gate drive. This is the on-resistance at the rated drive voltage — operating at lower gate voltage increases Rds(on) significantly.