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Infineon Technologies IRF3415STRLPBF
Infineon Technologies

IRF3415STRLPBF MOSFET N-Ch 150V 43A D2PAK HEXFET

MPNIRF3415STRLPBF
End of Life

IRF3415STRLPBF, HEXFET® N-Channel MOSFET, 150 V Vdss, 43 A continuous drain, 42 mOhm Rds(on) at 10 V gate drive, D2PAK (TO-263) surface mount, -55°C to 175°C junction temperature.

$2.28Ref. price · indicative, final on quote
IRF3415STRLPBF datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF3415STRLPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C43A (Tc)
Power dissipation3.8W (Ta), 200W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs42mOhm @ 22A, 10V
Gate charge (Qg) (Max) @ vgs200 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2400 pF @ 25 V

Product details

Gate drive and switching behaviour

The gate is driven with 10 V for the rated Rds(on) — the ±20 V Vgs(max) gives headroom for gate-drive transients. Total gate charge is 200 nC at 10 V, so the driver must supply about 2 A peak to switch at 100 kHz; a lower gate-drive voltage like 5 V will not fully enhance the channel and the on-resistance rises significantly. Input capacitance Ciss is 2400 pF at 25 V drain-source, which is moderate for a 150 V device — the gate-drive loop inductance and resistance need careful layout to avoid ringing at turn-on.

Thermal budget and package

The D2PAK (TO-263) surface-mount package dissipates 3.8 W in still air at 25°C ambient, but with a proper copper pad and vias to a heatsink plane, the junction-to-case rating of 200 W at 25°C case temperature is the real limit.

Lifecycle and sourcing

It is ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of IRF3415STRLPBF?

The maximum Rds(on) is 42 mOhm at 22 A drain current with 10 V gate drive. This is the on-resistance at the rated drive voltage — operating at lower gate voltage increases Rds(on) significantly.