IRF3415PBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET IRF3415PBF, N-Channel MOSFET, 150V Vdss, 43A Id, 42mOhm Rds(on) at 10V, 200 nC Qg, TO-220AB, -55°C to 175°C.

Infineon Technologies IRF3415PBF
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Technical specifications

IRF3415PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C43A (Tc)
Power dissipation200W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs42mOhm @ 22A, 10V
Gate charge (Qg) (Max) @ vgs200 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2400 pF @ 25 V

Technical details

150V, 43A N-channel — what the ratings tell you

Pair it with a driver rated for at least 2 A peak output.

Gate drive and switching — sizing the driver

Input capacitance Ciss is 2400 pF typical at 25 V drain-source — a moderate value that does not force a pre-driver stage but does demand a low-impedance gate loop. Keep the gate-driver output to the gate pin under 2 cm of PCB trace to minimise ringing at the Miller plateau.

Thermal and temperature range — harsh-environment ready

Maximum power dissipation is 200 W at case temperature 25°C — derate aggressively above 100°C case; the TO-220AB package with a proper heatsink is mandatory for any continuous current above 20 A.

IRF3415PBF
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