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Infineon Technologies IRF3415PBF

IRF3415PBF HEXFET N-Channel MOSFET, 150V, 43A, TO-220AB

MPNIRF3415PBF
End of Life

Infineon HEXFET IRF3415PBF, N-Channel MOSFET, 150V Vdss, 43A Id, 42mOhm Rds(on) at 10V, 200 nC Qg, TO-220AB, -55°C to 175°C.

$2.14Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRF3415PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C43A (Tc)
Power dissipation200W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs42mOhm @ 22A, 10V
Gate charge (Qg) (Max) @ vgs200 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2400 pF @ 25 V

Product details

150V, 43A N-channel — what the ratings tell you

The 200 nC total gate charge at 10 V tells you this is not a light-switching FET — it needs a gate driver capable of sourcing several amperes peak to keep the switching edges clean and avoid spending too much time in the linear region. Pair it with a driver rated for at least 2 A peak output.

Gate drive and switching — sizing the driver

Gate drive voltage is specified at 10 V for the rated Rds(on); the maximum gate-source rating is ±20 V, so a 12 V or 15 V gate rail is safe but stay below the absolute maximum. Input capacitance Ciss is 2400 pF typical at 25 V drain-source — a moderate value that does not force a pre-driver stage but does demand a low-impedance gate loop. Keep the gate-driver output to the gate pin under 2 cm of PCB trace to minimise ringing at the Miller plateau.

Thermal and temperature range — harsh-environment ready

Maximum power dissipation is 200 W at case temperature 25°C — derate aggressively above 100°C case; the TO-220AB package with a proper heatsink is mandatory for any continuous current above 20 A.

Frequently asked questions

What is the gate charge of IRF3415PBF?

Total gate charge is 200 nC maximum at 10 V gate-source voltage.