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Infineon Technologies IRF3205ZSTRRPBF — Discrete Semiconductors

IRF3205ZSTRRPBF N-Channel MOSFET, 55V 75A, 6.5mOhm

MPNIRF3205ZSTRRPBF
Obsolete

Infineon HEXFET® series, N-Channel MOSFET, Drain to Source Voltage: 55 V, Continuous Drain Current: 75A, Rds On (Max): 6.5mOhm @ 66A, 10V, D2PAK (TO-263), -55°C ~ 175°C.

$1.6500Ref. price · indicative, final on quote
Infineon Technologies IRF3205ZSTRRPBF datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF3205ZSTRRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation170W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs6.5mOhm @ 66A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3450 pF @ 25 V

Product details

Key ratings for the power rail

Gate charge is 110 nC at 10 V, and input capacitance is 3450 pF at 25 V drain-source, which gives a reasonable switching figure for a 75 A device in a hard-switched converter or motor drive.

Supplied in the D2PAK (TO-263-3) surface-mount package, the IRF3205ZSTRRPBF is a standard footprint for medium-power MOSFETs. Maximum power dissipation is 170 W at the case temperature, and the junction temperature range extends from -55°C to 175°C — wide enough for under-hood automotive or industrial environments where the ambient regularly exceeds 85°C. The D2PAK tab carries the drain current; ensure the PCB copper area and thermal vias are sized for the dissipation budget.

Frequently asked questions

What is the replacement for IRF3205ZSTRRPBF?

The evidence does not list an official Infineon successor order code. For a pin-compatible alternative, look for a current-production N-channel MOSFET in D2PAK with a 55 V Vdss, 75 A Id rating, and 6.5 mOhm or lower Rds(on) at 10 V gate drive. The IRF3205ZPBF is the same die in a different package (TO-220), not a direct SMD replacement.

IRF3205ZSTRRPBF vs IRF3205ZPBF: what is the difference?

The IRF3205ZPBF is the same HEXFET die in a through-hole TO-220 package, while the IRF3205ZSTRRPBF is the surface-mount D2PAK (TO-263) variant. Electrical ratings are identical. Choose the D2PAK for SMD assembly; choose the TO-220 for through-hole or heatsink mounting.