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Infineon Technologies IRF3205ZSTRLPBF — Discrete Semiconductors

Infineon IRF3205ZSTRLPBF N-Channel MOSFET, 55V 75A D2PAK

MPNIRF3205ZSTRLPBF
Active

Infineon Technologies HEXFET® N-Channel MOSFET, 55 V drain-source, 75 A continuous drain, 6.5 mOhm Rds(on) at 10 V, D2PAK (TO-263), Tape & Reel.

$1.8600Ref. price · indicative, final on quote
Infineon Technologies IRF3205ZSTRLPBF datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRF3205ZSTRLPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation170W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs6.5mOhm @ 66A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3450 pF @ 25 V

Product details

D2PAK power switch for 55 V rails

The IRF3205ZSTRLPBF is an N-channel enhancement-mode MOSFET from Infineon's HEXFET® series, rated 55 V drain-source and 75 A continuous drain at 25°C case temperature.

Thermal and package integration

The tape-and-reel packaging (Cut Tape also available) suits high-volume pick-and-place assembly.

Sourcing and compliance

The base product number IRF3205 anchors the family; the Z suffix indicates the enhanced Z-series with lower Rds(on) than the original IRF3205. The TR suffix denotes tape-and-reel packaging for automated assembly lines.

Frequently asked questions

How does the IRF3205ZSTRLPBF compare to the IMZA65R027M1HXKSA1?

The IMZA65R027M1HXKSA1 is a 650 V CoolSiC™ MOSFET in a through-hole package — a different voltage class, material system (SiC vs silicon), and mounting method. The IRF3205ZSTRLPBF is a 55 V silicon HEXFET in D2PAK surface-mount. They are not drop-in replacements; the choice depends on the bus voltage and thermal requirements of the design.

What is the gate charge and what does it mean for driver selection?

The maximum gate charge is 110 nC at 10 V. A standard totem-pole driver with 2 A peak capability comfortably drives this MOSFET at moderate frequencies.