Infineon HEXFET® IRF3205ZPBF, N-Channel MOSFET, 55 V Vdss, 75 A continuous drain, 6.5 mOhm Rds(on) at 66 A, 10 V gate drive, 110 nC gate charge, TO-220AB through-hole package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 75A (Tc) |
| Power dissipation | 170W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 6.5mOhm @ 66A, 10V |
| Gate charge (Qg) (Max) @ vgs | 110 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3450 pF @ 25 V |
The TO-220AB through-hole package suits designs where the PCB can handle the leaded footprint and a heatsink is mounted to the metal tab.
The 175°C Tj max also gives margin for surge events in load-dump scenarios on 12 V and 24 V vehicle electrical systems.
It is ROHS3 compliant.
Yes, the IRF3205ZPBF is ROHS3 compliant.
The IRF3205ZPBF is a later-generation HEXFET with improved on-resistance (6.5 mOhm vs the original IRF3205's 8.0 mOhm typical) and the same 55 V / 75 A rating in the same TO-220AB package. It is a drop-in replacement for the IRF3205 in most designs, offering lower conduction losses.