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Infineon Technologies IRF3205ZLPBF — Discrete Semiconductors

IRF3205ZLPBF N-Channel MOSFET, 55V 75A HEXFET, TO-262

MPNIRF3205ZLPBF
Last Buy

Infineon IRF3205ZLPBF, HEXFET® Series, N-Channel MOSFET, 55 V Vdss, 75 A Id, 6.5 mΩ Rds(on) at 66 A 10 V, 110 nC Qg, TO-262-3 Through Hole.

$1.6300Ref. price · indicative, final on quote
Infineon Technologies IRF3205ZLPBF datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF3205ZLPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation170W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs6.5mOhm @ 66A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3450 pF @ 25 V

Product details

The Infineon IRF3205ZLPBF is a 55 V, 75 A N-channel HEXFET MOSFET in a through-hole TO-262 package, part of the established HEXFET series. This is the FET you reach for when the load is a motor, a battery charger, a DC-DC converter, or a power supply rail in the 12 V to 48 V range, where conduction losses matter and you have the gate-drive headroom for a 10 V rail.

6.5 mΩ Rds(on) — conduction loss and the 10 V gate-drive requirement

The 6.5 mΩ maximum on-resistance is specified at Id = 66 A and Vgs = 10 V. That 10 V drive voltage is the condition for the lowest Rds(on); below that the resistance climbs sharply.

Last Buy — sourcing and lifecycle reality

This means Infineon has announced the end of production and is accepting final orders within a defined last-time-buy window. After that date, the part will no longer be manufactured.

TO-262 package — footprint and thermal path

The TO-262 (I²Pak) package is a through-hole, long-lead variant of the D²Pak surface-mount outline. It is designed for direct solder attachment to a PCB with the tab forming the drain connection. The maximum power dissipation is 170 W at the case temperature, which means the thermal path from the tab to the heatsink or PCB copper plane is the limiting factor — not the silicon itself.

Frequently asked questions

Is IRF3205ZLPBF obsolete or last time buy?

Infineon has discontinued production and is accepting final last-time-buy orders. After the LTB window closes, the part will no longer be manufactured. For new designs, evaluate a pin-compatible alternative or secure lifetime-buy quantities now.

What is the replacement for IRF3205ZLPBF?

The evidence does not list an official Infineon successor order code for the IRF3205ZLPBF. For a last-time-buy part without a direct replacement, the procurement path is to secure inventory through independent distribution or evaluate functionally similar N-channel MOSFETs in the same voltage and current class (55 V, 75 A, TO-262) from the same or alternate manufacturers. Submit an RFQ to discuss cross-reference options against your specific drive voltage and switching frequency requirements.