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Infineon Technologies IRF3205ZL — Discrete Semiconductors

IRF3205ZL HEXFET N-Channel MOSFET, 55V 75A, TO-262

MPNIRF3205ZL
Obsolete

Infineon IRF3205ZL, HEXFET® N-Channel MOSFET, 55 V Vdss, 75 A Id, 6.5 mOhm Rds(on) at 10 V, 170 W, TO-262-3 (I²Pak), -55°C to 175°C.

$1.6300Ref. price · indicative, final on quote
Infineon Technologies IRF3205ZL datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF3205ZL specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation170W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs6.5mOhm @ 66A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3450 pF @ 25 V

Product details

The IRF3205ZL is an Infineon HEXFET® N-channel power MOSFET in a through-hole TO-262 package (I²Pak, three long leads). The 170 W power dissipation ceiling and 175°C maximum junction temperature suit it for high-current switching in motor drives, DC-DC converters, and battery management systems where the board sees elevated ambient temperatures.

Obsolete — sourcing reality for sustainment programs

Gate charge and switching — 110 nC at 10 V

With a typical gate charge of 110 nC at 10 V, the IRF3205ZL requires a gate driver capable of sourcing and sinking that charge quickly to achieve fast switching edges. For a 100 kHz converter, budget roughly 110 nC × 100 kHz = 11 mA average gate drive current; peak current depends on the driver's output resistance and the gate loop inductance.

Frequently asked questions

Is IRF3205ZL obsolete?

Yes, the IRF3205ZL is listed as Obsolete. Infineon no longer manufactures it.

What is a replacement for IRF3205ZL?

A replacement would need to match the 55 V Vdss, 75 A Id, 6.5 mOhm Rds(on) at 10 V, and the TO-262 (I²Pak) footprint. Check parametric search tools for N-channel MOSFETs in the same package with equivalent or better ratings.