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Infineon Technologies IRF3205STRRPBF — Discrete Semiconductors

IRF3205STRRPBF HEXFET N-Channel MOSFET, 55 V, 8 mΩ, D2PAK

MPNIRF3205STRRPBF
Obsolete

Infineon IRF3205STRRPBF HEXFET N-Channel MOSFET, 55 V drain-source, 110 A continuous drain, 8 mΩ Rds(on) at 10 V gate drive, TO-263-3 D2PAK surface mount, -55 to 175 °C junction temperature.

$1.9700Ref. price · indicative, final on quote
Infineon Technologies IRF3205STRRPBF datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF3205STRRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C110A (Tc)
Power dissipation200W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 62A, 10V
Gate charge (Qg) (Max) @ vgs146 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3247 pF @ 25 V

Product details

Typical applications include high-current switching in automotive systems, industrial motor drives, DC-DC converters, and battery protection circuits where low conduction loss and ruggedness are required.

The 8 mΩ Rds(on) at 10 V gate drive is the headline conduction figure: at 62 A drain current the voltage drop stays under 0.5 V, keeping I²R losses manageable for a 200 W package. Input capacitance of 3247 pF at 25 V drain-source is typical for this current class; the driver output impedance and series gate resistor should be sized to control switching speed and EMI.

Procurement must turn to independent distribution and the surplus market. No official replacement part number is recorded in the lifecycle data — check the broader IRF3205 family for pin-compatible alternatives, but verify electrical compatibility on your own rails and switching conditions.

Frequently asked questions

What is the replacement for IRF3205STRRPBF?

The broader IRF3205 family includes pin-compatible options (e.g., the IRF3205 in different package variants), but you must verify electrical ratings — particularly Rds(on), gate charge, and switching speed — against your design requirements before substituting.

IRF3205STRRPBF vs IRF3205 – what are the differences?

The IRF3205STRRPBF and the base IRF3205 share the same silicon die — the same 55 V, 110 A, 8 mΩ ratings. The key difference is the packaging: the STR suffix indicates a surface-mount D2PAK (TO-263-3) on tape and reel, while the base IRF3205 is typically offered in a through-hole TO-220 package. Electrical characteristics are identical; the choice is driven by assembly process and thermal management approach.