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Infineon Technologies IRF3205STRR — Discrete Semiconductors

IRF3205STRR N-Channel MOSFET, 55V 110A, 8mOhm, D2PAK

MPNIRF3205STRR
Obsolete

Infineon IRF3205STRR, HEXFET® N-Channel MOSFET, 55V Vdss, 110A Id, 8mOhm Rds(on) @ 62A 10V, D2PAK, -55°C to 175°C, Tape & Reel.

$1.6400Ref. price · indicative, final on quote
Infineon Technologies IRF3205STRR datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF3205STRR specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C110A (Tc)
Power dissipation200W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 62A, 10V
Gate charge (Qg) (Max) @ vgs146 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3247 pF @ 25 V

Product details

A power MOSFET that defined a generation — now in its end-of-life phase

This means Infineon has ceased production, and no further last-time-buy windows are open. For designs still requiring this exact footprint and performance envelope, the procurement path is through qualified independent distributors who can verify date-code authenticity and supply traceable parts.

Input capacitance of 3247 pF at 25 V Vds is moderate; the gate drive loop should be kept tight to avoid ringing. The ±20 V maximum gate-source rating leaves margin for 12 V or 15 V gate drive rails, but the 4 V gate threshold at 250 µA means the device is fully enhanced only with 10 V drive — logic-level 5 V drive will not achieve the rated Rds(on).

Frequently asked questions

Is IRF3205STRR obsolete?

Yes, the IRF3205STRR is officially marked Obsolete by Infineon. No further production is planned, and last-time-buy windows have closed. Available stock is limited to surplus and new-old-stock in the independent distribution channel.

What is the replacement for IRF3205STRR?

Infineon has not published a direct official successor for the IRF3205STRR. For a pin-compatible drop-in, evaluate current-production N-channel MOSFETs in D2PAK with similar 55 V Vdss, 110 A Id, and 8 mOhm Rds(on) ratings. Parametric search tools can identify candidates; verify gate charge, threshold voltage, and package footprint before substituting.

What is the Rds(on) of IRF3205STRR?

The maximum on-resistance is 8 mOhm at a drain current of 62 A and a gate-source voltage of 10 V.

What package is IRF3205STRR?

The IRF3205STRR is supplied in a surface-mount D2PAK package, also known as TO-263-3 (2 leads plus tab) or TO-263AB. The supplier device package is D2PAK.