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Infineon Technologies IRF3205STRLPBF — Discrete Semiconductors

IRF3205STRLPBF Infineon N-Channel MOSFET, 55V 110A D2PAK

MPNIRF3205STRLPBF
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Infineon Technologies HEXFET® N-Channel MOSFET, IRF3205STRLPBF, 55 V Vdss, 110 A Id, 8 mOhm Rds(on), D2PAK (TO-263), Tape & Reel.

$4.1900Ref. price · indicative, final on quote
Infineon Technologies IRF3205STRLPBF datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRF3205STRLPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C110A (Tc)
Power dissipation200W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 62A, 10V
Gate charge (Qg) (Max) @ vgs146 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3247 pF @ 25 V

Product details

The IRF3205STRLPBF: These numbers set the drive current required from the gate driver for a target switching frequency — a 146 nC gate charge at 50 kHz switching draws 7.3 mA average from the driver, within the capability of most dedicated MOSFET drivers.

Temperature grade and power dissipation

Maximum power dissipation is 200 W at case temperature, derated according to the thermal resistance in the datasheet.

Supplied in Tape & Reel (TR) or Cut Tape (CT) packaging for volume assembly or prototype quantities. The D2PAK package is moisture-sensitive; store the reels in a dry cabinet per JEDEC MSL guidelines if the seal is broken.