8 mOhm at 62 A — the conduction-loss floor for high-current switching
The IRF3205PBF is an N-channel HEXFET power MOSFET from Infineon, rated 55 V drain-to-source and 110 A continuous drain current at a 25 °C case temperature. The TO-220AB through-hole package keeps the thermal path short to a heatsink; the 200 W power dissipation rating at the case tells you the package can move that heat if the sink is sized right.
Total gate charge is 146 nC at a 10 V gate drive. At a 20 kHz switching frequency, the average gate-drive current is 146 nC × 20 kHz = 2.92 mA — well within a standard gate-driver IC. Push the frequency to 100 kHz and the drive current climbs to 14.6 mA; a driver rated for 2 A peak still handles the turn-on edge, but the average current through the bootstrap diode or isolated supply needs the headroom.
The part carries ROHS3 compliance.