Infineon IRF3205LPBF, HEXFET® Series, N-Channel MOSFET, 55V Vdss, 110A Id, 8mOhm Rds(on) @ 10V, TO-262-3 Through Hole, -55°C to 175°C TJ.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 110A (Tc) |
| Power dissipation | 200W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 8mOhm @ 62A, 10V |
| Gate charge (Qg) (Max) @ vgs | 146 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3247 pF @ 25 V |
The package is TO-262-3 with long leads (I²Pak / TO-262AA), through-hole mount. The supplier device package is TO-262. Maximum power dissipation is 200 W at case temperature.
Yes, the IRF3205LPBF is listed as Obsolete. Infineon no longer produces this exact order code. It must be sourced from surplus or broker inventory.
This is the on-resistance spec used for conduction loss calculations in power-switch designs.