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Infineon Technologies IRF300P227
Infineon Technologies

IRF300P227 N-Channel MOSFET, 300V, 50A, TO-247-3

MPNIRF300P227
End of Life

Infineon StrongIRFET™ IRF300P227, N-Channel MOSFET, 300 V Vdss, 50 A continuous drain, 40 mOhm Rds(on) at 10 V, 107 nC gate charge, TO-247-3 through-hole, -55°C to 175°C junction temperature.

$7.6Ref. price · indicative, final on quote
IRF300P227 datasheet
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF300P227 Technical Specifications
ParameterValue
SeriesStrongIRFET™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage300 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation313W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 270µA
Rds on (Max) @ id, vgs40mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs107 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4893 pF @ 50 V

Product details

300 V, 50 A — StrongIRFET™ in a TO-247-3

The IRF300P227: It comes in a through-hole TO-247-3 package (PG-TO247-3), which means you can swap it on site with a screwdriver and a soldering iron — no hot-air station, no reflow profile.

40 mOhm Rds(on) — conduction loss at 30 A

The on-resistance is 40 mOhm maximum at 30 A drain current with 10 V gate drive. The 313 W power dissipation rating supports pulsed operation.

107 nC gate charge — drive current budget

Gate charge is 107 nC at 10 V. The input capacitance is 4893 pF at 50 V drain-source.

Not a logic-level FET — needs 10 V drive

The gate threshold voltage is 4 V maximum at 270 µA drain current. The specified drive voltage for minimum Rds(on) is 10 V, and the absolute maximum gate-source rating is ±20 V.

The junction temperature range is -55°C to 175°C.

Frequently asked questions

Is IRF300P227 a logic-level MOSFET?

No. The gate threshold voltage is 4 V maximum at 270 µA, and the specified drive for minimum Rds(on) is 10 V.