Infineon StrongIRFET™ IRF300P227, N-Channel MOSFET, 300 V Vdss, 50 A continuous drain, 40 mOhm Rds(on) at 10 V, 107 nC gate charge, TO-247-3 through-hole, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | StrongIRFET™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 300 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 50A (Tc) |
| Power dissipation | 313W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4V @ 270µA |
| Rds on (Max) @ id, vgs | 40mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 107 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4893 pF @ 50 V |
The IRF300P227: It comes in a through-hole TO-247-3 package (PG-TO247-3), which means you can swap it on site with a screwdriver and a soldering iron — no hot-air station, no reflow profile.
The 313 W power dissipation rating supports pulsed operation.
Gate charge is 107 nC at 10 V. The input capacitance is 4893 pF at 50 V drain-source.
No. The gate threshold voltage is 4 V maximum at 270 µA, and the specified drive for minimum Rds(on) is 10 V.